Toshiba DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.

Features

  • Up to 17% reduction in RDS(ON) (Drain-source ON Resistance) compared with the previous DTMOS IV
  • ON Resistance lineup 0.29 to 0.56Ω
  • Various package lineup: To be deployed in 2 packages (DPAK, TO-220SIS)

Applications

  • Servers
  • Switching power supplies for base stations or others
  • Photovoltaic inverters

Package Dimensions

Mechanical Drawing - Toshiba DTMOSV Super Junction MOSFETs
View Results ( 12 ) Page
物料编号 封装 / 箱体 Vds-漏源极击穿电压 Id-连续漏极电流 数据表
TK380P60Y,RQ DPAK-3 (TO-252-3) 600 V 9.7 A TK380P60Y,RQ 数据表
TK290P65Y,RQ DPAK-3 (TO-252-3) 650 V 11.5 A TK290P65Y,RQ 数据表
TK560P60Y,RQ DPAK-3 (TO-252-3) 600 V 7 A TK560P60Y,RQ 数据表
TK290A60Y,S4X TO-220-3 600 V 11.5 A TK290A60Y,S4X 数据表
TK560P65Y,RQ DPAK-3 (TO-252-3) 650 V 7 A TK560P65Y,RQ 数据表
TK290A65Y,S4X TO-220-3 650 V 11.5 A TK290A65Y,S4X 数据表
TK290P60Y,RQ DPAK-3 (TO-252-3) 600 V 11.5 A TK290P60Y,RQ 数据表
TK560A65Y,S4X TO-220-3 650 V 7 A TK560A65Y,S4X 数据表
TK380A60Y,S4X TO-220-3 600 V 9.7 A TK380A60Y,S4X 数据表
TK380A65Y,S4X TO-220-3 650 V 9.7 A TK380A65Y,S4X 数据表
发布日期: 2017-06-27 | 更新日期: 2022-06-23