Toshiba P-Channel MOSFETs
Toshiba P-Channel MOSFETs product offering features P-channel power MOSFETs for load switching in ultra-portable mobile computing devices and battery protection circuits for large capacity batteries. Developed using advanced trench-gate processes and packaging technologies, the P-channel MOSFETs are optimized to provide low on-resistance. These low on-resistance power MOSFETs also offer high current ratings, low capacitance, and high permissible power dissipation within a small form factor to meet the lower voltage and lower power requirements of system power supplies in portable electronics applications.
The offering includes a lineup of low voltage, 1.5V operation devices with industry-leading on-resistance for applications with current ratings ranging from 1.0A to 5.0A. The design of the Toshiba P-Channel MOSFETs makes them ideal for load switching in mobile handsets, digital cameras, portable audio players, and other portable electronic devices, as well as battery circuit protection in large capacity batteries such as lithium-ion batteries.
Features
- Low drain-source on-resistance
- Low leakage current
- Low voltage operation
- Current ratings ranging from 1.0A to 5.0A
Applications
- Load switching in mobile handsets, digital cameras, portable audio players, and other portable electronic devices
- Lithium-Ion Secondary Batteries
- Power Management Switches
View Results ( 2 ) Page
| 物料编号 | Rds On-漏源导通电阻 | Pd-功率耗散 | Id-连续漏极电流 | Qg-栅极电荷 | 封装 / 箱体 | 数据表 |
|---|---|---|---|---|---|---|
| TPH1R712MD,L1Q | 1.7 mOhms | 78 W | 60 A | 182 nC | SOP-8 |  |
| TPN4R712MD,L1Q | 4.7 mOhms | 42 W | 36 A | 65 nC | TSON-8 | |
发布日期: 2015-07-30
| 更新日期: 2022-03-11