返回Toshiba

Toshiba TW007D120E 1200V Trench-Gate SiC MOSFETs

Toshiba TW007D120E 1200V Trench-Gate SiC MOSFETs are designed for use in power supply systems in next-generation artificial intelligence (AI) data centers and renewable energy-related equipment. The TW007D120E contributes to lower power consumption and the miniaturization and higher efficiency of data center power supply systems. The TW007D120E features a proprietary trench-gate structure that provides leading low on-resistance per unit area (RDS(on)A). These SiC MOSFETs from Toshiba reduce conduction loss through lower on-resistance while simultaneously achieving lower switching loss.

Features

  • Low On-resistance and low RDS(on)A
  • Low switching loss and low RDS(on) × Qgd
  • 5V to 18V low gate drive voltage (VGS_ON) 
  • High-thermal-performance QDPAK package

Applications

  • Power supplies for data centers (AC-DC, DC-DC)
  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) charging stations
  • Energy storage systems
  • Industrial motors

Specifications

  • 1200V maximum drain-source voltage
  • 172A maximum drain current
  • 7.0mΩ drain-source on-resistance
  • 3.0V to 5.0V gate threshold voltage
  • 317nC typical total gate charge
  • 33nC typical gate-drain charge
  • 13,972pF input capacitance
  • 3.2V typical diode forward voltage

Performance Comparison Charts

Chart - Toshiba TW007D120E 1200V Trench-Gate SiC MOSFETs
发布日期: 2026-05-26 | 更新日期: 2026-05-28