通用应用用MOSFET

英飞凌科技通用应用用MOSFET提供简单、具有价格竞争力的解决方案,具有广泛的可用性和出色的质量。该产品组合涵盖高达100V电压等级。它包括单路和双路N沟道MOSFET,以及用于较小功率处理(单路和双路N沟道和P沟道MOSFET)的产品。所选零件有多种封装可选,包括SOT-23、PQFN 2x2、PQFN 3x3、DPAK、SO-8、SuperSO8 5x6和TO220。这些产品适合用于各种通用应用,例如适配器、充电器、电池供电应用、电机控制和驱动器、电池管理系统、逆变器、计算和移动应用。

结果: 19
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
Infineon Technologies MOSFET IFX FET 40V 3,283库存量
¥36.6459
¥17.3681
¥14.6448
¥13.56
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 1,795库存量
¥23.6622
¥11.9893
¥10.6672
¥8.9383
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 8,698库存量
¥22.2497
¥10.9158
¥9.8423
¥7.8535
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 185 A 1.9 mOhms 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 943库存量
1,000预期 2026/11/26
¥21.7525
¥13.4809
¥12.0797
¥9.8423
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 198 A 1.4 mOhms 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1,988库存量
¥34.4085
¥17.5376
¥15.8765
¥12.9046
¥12.4865
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 83 A 3 mOhms 20 V 3 V 154 nC - 55 C + 175 C 41 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1,395库存量
¥26.9618
¥13.4809
¥12.1588
¥9.8423
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 4,900库存量
¥32.0129
¥16.2155
¥13.8086
¥12.2379
¥11.1644
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 197 A 1.3 mOhms 20 V 3.4 V 159 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 2,725库存量
9,000预期 2026/12/3
¥28.1257
¥14.0572
¥12.7351
¥10.3395
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 193 A 1.5 mOhms 20 V 3.4 V 106 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1,338库存量
¥37.4708
¥20.5095
¥18.6111
¥15.3906
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 6,337库存量
¥23.8995
¥11.8311
¥10.6672
¥8.5993
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 115 A 4 mOhms 20 V 3.8 V 54 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 3,917库存量
¥19.0292
¥9.266
¥8.249
¥6.5653
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 379库存量
1,000预期 2027/2/25
¥29.6964
¥14.9725
¥13.9781
¥11.0062
¥10.17
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 182 A 2.4 mOhms 20 V 3.8 V 89 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 841库存量
1,000预期 2026/10/15
¥19.5264
¥10.0118
¥7.9891
¥7.0173
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 100 V 77 A 8.2 mOhms 20 V 3.8 V 28 nC - 55 C + 175 C 100 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 911库存量
¥18.7806
¥9.0965
¥8.136
¥6.4749
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 100 V 52 A 12.9 mOhms 20 V 3.8 V 19 nC - 55 C + 175 C 71 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 544库存量
¥24.069
¥11.9102
¥10.7576
¥8.8479
¥7.6953
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 46 A 8.2 mOhms 20 V 3.8 V 42 nC - 55 C + 175 C 35 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 1,551库存量
¥34.4876
¥17.5376
¥15.5488
¥13.0741
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 935库存量
1,000预期 2026/12/24
¥18.6111
¥9.0174
¥8.0456
¥6.6783
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 119 A 3.05 mOhms 20 V 3.3 V 68 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 33库存量
2,000预期 2026/11/19
¥16.046
¥7.6614
¥6.7235
¥5.3336
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 80 A 4 mOhms 20 V 3.3 V 38 nC - 55 C + 175 C 107 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V
1,990预期 2026/10/23
¥36.725
¥18.7806
¥17.0404
¥13.9781
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 196 A 1.6 mOhms 20 V 3.8 V 170 nC - 55 C + 175 C 300 W Enhancement Tube