TKx硅N沟道MOSFET

Toshiba TKx硅N沟道MOSFET有U-MOSX-H和DTMOSVI类型可供选择,具有卓越的性能特性。这些MOSFET的设计具有快速反向恢复时间,通过减少关断和导通状态之间的延迟,从而可提高高速开关应用的效率。低漏极-源极导通电阻[RDS(on)]有助于将功率损耗降至最低,并可改善热管理,使其成为处理大电流并具有低能量耗散应用的理想选择。

结果: 20
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 50库存量
¥35.7306
¥23.4136
¥17.4585
¥14.6448
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ 2,000库存量
剪切带
¥64.8507
¥43.3468
¥34.8266
¥30.9394
¥27.459
卷轴
¥27.459
最低: 1
倍数: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=176W F=1MHZ 1,961库存量
剪切带
¥41.6066
¥27.3008
¥20.3513
¥17.0404
¥15.7974
卷轴
¥14.803
最低: 1
倍数: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ 53库存量
¥65.5061
¥43.844
¥35.2334
¥31.3462
¥27.798
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFET 600V Silicon N-Channel MOS (DTMOS) MOSFET 1,960库存量
剪切带
¥48.8047
¥31.9338
¥23.4927
¥20.9276
¥18.532
卷轴
¥18.532
最低: 1
倍数: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ 1,986库存量
剪切带
¥35.821
¥23.4136
¥17.4585
¥14.6448
¥13.56
卷轴
¥12.7351
最低: 1
倍数: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ 1,974库存量
剪切带
¥32.0129
¥20.9276
¥15.2211
¥12.7351
¥11.8311
卷轴
¥11.0853
最低: 1
倍数: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFET TO220 150V 2.2A N-CH 750库存量
¥53.7654
¥29.4478
¥26.9618
¥25.312
¥22.4983
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFET TO220 150V 2.2A N-CH 335库存量
¥46.4882
¥27.1313
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFET TO220 150V 1.4A N-CH 294库存量
¥36.725
¥18.7806
¥16.9613
¥13.6504
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFET TO220 150V 1.1A N-CH 187库存量
¥31.0185
¥20.1818
¥14.1476
¥11.8311
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFET TO247 650V 1.69A N-CH 85库存量
60预期 2026/12/2
¥85.0325
¥45.991
¥42.4315
¥41.8552
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 143库存量
¥32.0129
¥20.9276
¥15.2211
¥12.7351
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFET TO220 150V 1.4A N-CH 350库存量
¥36.3069
¥18.6111
¥16.7918
¥13.7295
¥13.4018
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFET TO220 150V 1.1A N-CH 224库存量
¥32.2615
¥16.5432
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 9库存量
100预期 2027/1/22
¥55.5847
¥29.0297
¥27.0522
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-247 PD=176W F=1MHZ 20库存量
¥50.5449
¥33.0864
¥24.3967
¥21.6734
¥19.1874
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFET Power MOSFET N-Channel 8库存量
¥71.3821
¥38.7929
¥35.5724
¥33.1655
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS 9库存量
¥79.0774
¥55.0875
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR DFN 8x8 PD=240W F=1MHZ 无库存交货期 16 周
卷轴
¥21.8316
最低: 5,000
倍数: 5,000
: 5,000
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel