Dtmosvi MOSFET

Toshiba DTMOSVI系列MOSFET具有低漏极-源极导通电阻 (RDS(ON)= 0.033 Ω(典型值))。这些器件具有650V漏源电压和57A漏极电流。DTMOSVI系列MOSFET具有高速开关特性和较低电容。这些MOSFET非常适合用于开关电源应用。

结果: 16
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET 230W 1MHz 8x8DFN 7,245库存量
剪切带
¥53.6863
¥28.3743
¥25.9674
¥24.069
卷轴
¥23.6622
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 30 A 99 mOhms 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement DTMOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK PD=80W F=1MHZ 99库存量
剪切带
¥25.312
¥12.4074
¥11.1644
¥9.266
卷轴
¥9.266
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 9.7 A 430 mOhms 30 V 2.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET 230W 1MHz TO-247 2库存量
剪切带
¥69.3933
¥36.3973
卷轴
¥36.3973
最低: 1
倍数: 1
: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 90 mOhms 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ 1,035库存量
剪切带
¥61.7884
¥28.9506
¥23.6622
卷轴
¥23.6622
最低: 1
倍数: 1
: 2,000
Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 30 A 70 mOhms 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ 1,964库存量
剪切带
¥34.7362
¥16.6223
¥15.6279
卷轴
¥12.656
最低: 1
倍数: 1
: 2,000
Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 15 A 149 mOhms 30 V 4 V 25 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ 3,792库存量
剪切带
¥48.2284
¥24.3176
¥20.5095
¥19.6846
卷轴
¥19.6846
最低: 1
倍数: 1
: 2,000
Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 24 A 86 mOhms 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Reel, Cut Tape, MouseReel

Toshiba MOSFET Power MOSFET 57A 360W 650V 1,969库存量
¥103.1464
¥57.0763
¥56.9859
¥53.3473
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 57 A 40 mOhms 30 V 3 V 105 nC - 55 C + 150 C 360 W Enhancement DTMOSVI Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=270W F=1MHZ 4,000库存量
剪切带
¥75.5179
¥46.0701
¥39.9568
¥36.1487
¥32.0129
卷轴
¥28.9506
最低: 1
倍数: 1
: 2,000
Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 38 A 51 mOhms 30 V 4 V 62 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 49库存量
¥63.1105
¥33.9113
¥31.0185
¥28.2048
最低: 1
倍数: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 650 V 30 A 90 mOhms 30 V 3 V 47 nC - 55 C + 150 C 45 W Enhancement DTMOSVI Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220AB(OS) PD=130W F=1MHZ 88库存量
¥35.7306
¥18.7806
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 550 mOhms 20 V 3 V 19 nC - 55 C + 150 C 130 W Enhancement DTMOSVI Tube
Toshiba MOSFET 270W 1MHz TO-247
458预期 2026/11/13
剪切带
¥73.2918
¥49.8782
卷轴
¥49.8782
最低: 1
倍数: 1
: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 65 mOhms 30 V 4 V 62 nC - 55 C + 150 C 270 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET MOSFET 650V 110mOhms DTMOS-VI
59预期 2026/11/13
¥55.7542
¥34.6571
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 110 mOhms 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET 360W 1MHz TO-247-4L(T) 无库存交货期 24 周
剪切带
¥135.2384
¥78.6593
卷轴
¥78.6593
¥73.0432
¥71.8793
最低: 1
倍数: 1
: 25
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 57 A 40 mOhms 30 V 4 V 105 nC - 55 C + 150 C 360 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO247-4L PD=230W F=1MHZ 无库存交货期 24 周
¥90.6599
¥55.0875
¥46.4882
¥44.9175
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 90 mOhms 30 V 3 V 47 nC - 55 C + 150 C 45 W Enhancement DTMOSVI Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-247 PD=230W F=1MHZ 无库存交货期 24 周
¥61.4607
¥32.1711
¥29.4478
¥25.9674
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ 无库存交货期 16 周
卷轴
¥14.9725
¥14.5544
最低: 2,000
倍数: 2,000
: 2,000
Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 18 A 122 mOhms 30 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement Reel