M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

结果: 8
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STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT 924库存量
¥73.6195
¥40.2845
¥34.9848
最低: 1
倍数: 1
Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
327库存量
¥59.9691
¥31.4366
¥26.3855
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
445库存量
¥45.8215
¥26.8827
¥20.0123
¥17.6958
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package 274库存量
1,000预期 2027/9/7
¥53.5168
¥35.0752
¥25.8092
¥22.9164
¥20.3513
最低: 1
倍数: 1
Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
1,393预期 2026/12/4
¥53.4377
¥34.9848
¥25.7301
¥22.9164
¥20.3513
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
600预期 2027/8/20
¥51.6975
¥29.3687
¥27.5494
¥21.8316
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
592预期 2027/8/20
¥40.8608
¥26.9618
¥19.1083
¥15.3906
¥14.7239
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 无库存交货期 22 周
¥58.5679
¥39.211
¥31.5157
¥27.9562
¥24.8148
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube