950V CoolMOS™ PFD7 SJ MOSFET

英飞凌科技950V CoolMOS™ PFD7 SJ MOSFET采用超级结 (SJ) 技术。SJ技术先进、易用,具有同类最佳的性能,非常适合用于照明和工业SMPS应用。PFDJ集成了超快体二极管,可用于具有最低反向恢复电荷 (Qrr) 的谐振拓扑。

结果: 10
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
Infineon Technologies MOSFET LOW POWER_NEW 1,835库存量
剪切带
¥34.239
¥17.4585
¥15.7974
¥13.1532
卷轴
¥12.4074
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 712库存量
¥29.0297
¥14.5544
¥13.1532
¥10.5881
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 7.2 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 30 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 782库存量
¥124.6503
¥70.1391
¥68.9074
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 74.7 A 60 mOhms 30 V 3.5 V 315 nC - 55 C + 150 C 446 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 613库存量
¥58.647
¥33.1655
¥30.5213
¥28.2048
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,189库存量
2,000预期 2026/11/30
剪切带
¥62.3647
¥33.5045
¥30.6908
¥29.3687
卷轴
¥27.7076
最低: 1
倍数: 1
: 1,000
Si SMD/SMT TO-263-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 1,132库存量
剪切带
¥30.5213
¥15.3906
¥13.899
¥11.3339
卷轴
¥10.5881
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape


Infineon Technologies MOSFET LOW POWER_NEW 3,695库存量
¥34.4876
¥17.1195
¥15.5488
¥12.9046
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 49库存量
500在途量
¥62.2856
¥33.4141
¥30.6004
¥27.7076
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 13.9 A 130 mOhms 30 V 3.5 V 141 nC - 55 C + 150 C 33 W Enhancement Tube
Infineon Technologies MOSFET LOW POWER_NEW 644库存量
剪切带
¥27.1313
¥13.56
¥12.2379
¥9.9214
¥9.7632
卷轴
¥9.0174
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 379库存量
¥34.239
¥17.4585
¥15.7974
¥12.8255
¥12.656
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 8.7 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 155 C 31 W Enhancement Tube