DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.

结果: 12
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A 3,372库存量
剪切带
¥23.9899
¥11.8311
¥10.6672
¥8.5993
¥8.0682
卷轴
¥7.5258
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET N-Ch DTMOSV 600V 80W 590pF 9.7A 3,850库存量
剪切带
¥21.2553
¥13.4809
¥9.0965
¥7.3563
¥6.5992
卷轴
¥5.8534
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A 1,900库存量
剪切带
¥17.7862
¥8.5993
¥7.6953
¥6.1924
卷轴
¥5.1754
¥5.0059
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A 1,353库存量
剪切带
¥19.6846
¥9.5937
¥8.5993
¥6.8478
¥6.4975
卷轴
¥5.7517
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSV 600V 35W 730pF 11.5A 1,038库存量
¥25.8092
¥11.9893
¥9.266
¥8.2603
¥8.136
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFET N-Ch DTMOSV 650V 35W 730pF 11.5A 97库存量
¥27.3799
¥13.7295
¥13.2323
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A 626库存量
剪切带
¥22.6678
¥14.5544
¥9.9214
¥8.3507
卷轴
¥7.0512
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11.5 A 290 mOhms 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET N-Ch DTMOSV 650V 30W 380pF 7.0A 177库存量
¥27.9562
¥13.8086
¥12.3283
¥10.5881
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET N-Ch DTMOSV 600V 30W 590pF 9.7A 无库存交货期 16 周
¥23.165
¥14.8934
¥10.2604
¥8.2716
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS 无库存交货期 16 周
¥26.0578
¥16.7918
¥11.4921
¥9.3451
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET N-Ch DTMOSV 650V 80W 590pF 9.7A 无库存交货期 24 周
卷轴
¥7.0512
¥6.7009
最低: 2,000
倍数: 2,000
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.7 A 380 mOhms 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel
Toshiba MOSFET N-Ch DTMOSV 600V 30W 380pF 7.0A 无库存交货期 16 周
¥21.5039
¥13.7295
¥9.3451
¥7.9665
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 560 mOhms 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube