N沟道MDmesh K6功率MOSFET

STMicroelectronics N沟道MDmesh K6功率MOSFET具有齐纳保护和100%雪崩测试。这些功率MOSFET的汲极/源极击穿电压最小为800V,±30V栅极/源极电压,工作结温范围为-55°C至150°C。MDmesh K6功率MOSFET还具有5V/ns峰值二极管恢复电压斜坡、100A/µs峰值二极管恢复电流斜坡以及120V/ns MOSFET dv/dt的坚固性。典型应用包括笔记本电脑和一体机、反激式转换器、平板电脑适配器和LED灯。

结果: 12
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
STMicroelectronics MOSFET N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET 2,338库存量
剪切带
¥38.1375
¥19.6055
¥17.7862
¥15.2211
卷轴
¥14.3058
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 12 A 340 mOhms 10 V 3 V 17.8 nC - 55 C + 150 C 92 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package 765库存量
剪切带
¥36.5555
¥18.6902
¥16.9613
¥14.3962
卷轴
¥13.4809
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 10 A 450 mOhms 30 V 3 V 17.3 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package 2,323库存量
剪切带
¥49.2115
¥25.8092
¥23.5718
¥21.4248
¥20.1818
卷轴
¥20.1818
最低: 1
倍数: 1
: 2,500
Si SMD/SMT N-Channel 1 Channel 800 V 16 A 220 Ohms 30 V 4 V 25.9 nC - 55 C + 150 C 105 W Enhancement Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET 988库存量
¥62.2065
¥35.5724
¥29.945
¥26.6341
¥23.8995
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 16 A 220 mOhms 30 V 3.5 V 25.9 nC - 55 C + 150 C 27 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 997库存量
¥21.2553
¥10.4186
¥9.266
¥7.4693
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 5 A 1.1 Ohms 30 V 4 V 5.7 nC - 55 C + 150 C 21 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1,055库存量
¥21.0971
¥10.3395
¥9.266
¥7.4015
最低: 1
倍数: 1
Si Tube
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 698库存量
¥27.7076
¥16.2946
¥12.4865
¥10.2604
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 600 mOhms 30 V 4 V 10.7 nC - 55 C + 150 C 86 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 19库存量
2,000在途量
¥30.1032
¥19.6846
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 7 A 600 mOhms 30 V 4 V 10.7 nC - 55 C + 150 C 23 W Enhancement MDmesh Tube


STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package 48库存量
1,000预期 2027/4/23
¥58.8165
¥33.9113
¥25.8092
¥22.5774
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 220 mOhms 30 V 4 V 25.9 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET 159库存量
¥40.5331
¥21.0067
¥19.0292
¥15.7183
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 450 mOhms Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package
Mouser 目前在您所在地区不销售该产品。
Si Through Hole TO-220-3 1 Channel 800 V 12 A 340 mOhms 30 V 3.5 V - 55 C + 150 C 115 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package
Mouser 目前在您所在地区不销售该产品。
Si Through Hole TO-220-3 1 Channel 800 V 6 A 900 mOhms 30 V 3.5 V 7 nC - 55 C + 150 C 68 W Enhancement Tube