1γ DRAM Node-Based DDR5 Memory

Micron 1γ DRAM Node-Based DDR5 Memory is a 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs. This component delivers superior performance and power efficiency by building on Micron’s previous 1α (1-alpha) and 1β (1-beta) DRAM nodes. The 1γ DRAM improves performance to support the scaling of compute across a range of memory offerings, meeting the demands of future AI workload requirements. The module also offers power savings with next-generation high-K metal gate CMOS technology and design optimizations. This combination offers greater than 20% lower power, which improves thermal profiles. Micron 1γ DRAM Node-Based DDR5 Memory also provides >30% more bits-per-wafer output than the previous generation. Suitable applications include mobile, data centers, automotive, edge AI, and AI PCs.

结果: 2
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 类型 存储容量 数据总线宽度 最大时钟频率 封装 / 箱体 组织 电源电压-最小 电源电压-最大 最小工作温度 最大工作温度 封装
Micron MT60B1G16HD-56B:D
Micron 动态随机存取存储器 DDR5 16Gbit 16 102/153 VFBGA 1 CT
1,268库存量
最低: 1
倍数: 1
最大: 300

SDRAM - DDR5 16 Gbit 16 bit 2.8 GHz VFBGA-102 1 G x 16 1.1 V 1.1 V 0 C + 95 C Tray
Micron MT60B2G8RZ-64B:D
Micron 动态随机存取存储器 DDR5 16Gbit 8 78/117VFBGA 1 CT
1,299库存量
最低: 1
倍数: 1

SDRAM - DDR5 16 Gbit 8 bit 3.2 GHz VFBGA-78 2 G x 8 1.1 V 1.1 V 0 C + 95 C Tray