MXP120 MaxSiC™ 1200V N沟道MOSFET

Vishay Semiconductors MXP120 MaxSiC™ 1200V N沟道MOSFET具有1200V漏源电压、快速开关速度和3μs短路耐受时间。这些MOSFET还具有56W至288W的最大功率耗散(Tc = 25°C)和10.5A至53A的漏极连续电流(Tc = 25°C)。MXP120 ™ N沟道MOSFET不含卤素,有TO-247AD、TO-247AD和TO-263封装可供选择。这些MOSFET用于充电器、辅助电机驱动器和DC-DC转换器。

结果: 17
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET 800库存量
¥101.1576
¥73.2014
¥60.9635
¥56.3305
¥56.2514
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
600预期 2027/3/24
¥114.3108
¥83.7895
¥73.6195
¥58.7261
¥58.647
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
600预期 2027/3/24
¥112.9887
¥83.1341
¥72.7946
¥58.2289
¥58.1498
最低: 1
倍数: 1
Through Hole TO-247AD-3 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
787预期 2027/4/14
¥84.3658
¥59.6414
¥49.6296
¥44.2508
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
587预期 2027/4/14
¥91.4848
¥58.5679
¥50.8726
¥45.7424
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
787预期 2027/4/14
¥76.84
¥52.5224
¥43.2564
¥38.5443
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
571预期 2027/4/14
¥83.8686
¥52.4433
¥45.2452
¥40.3636
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
600预期 2027/4/14
¥88.8406
¥49.381
¥45.5729
¥38.872
¥38.7929
最低: 1
倍数: 1
Through Hole TO-247AD-4L 1 Channel 1.2 kV 18 A 200 mOhms - 10 V, + 22 V 3.1 V 25 nC - 55 C + 175 C 109 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
788预期 2027/4/14
剪切带
¥69.9809
¥37.968
¥34.9057
¥28.2839
卷轴
¥27.8771
最低: 1
倍数: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 12 A 313 mOhms - 10 V, + 22 V 3 V 15 nC - 55 C + 175 C 85 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
595预期 2027/4/14
¥131.193
¥75.7665
¥70.4781
¥63.6077
¥63.5286
最低: 1
倍数: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
738预期 2027/1/11
¥103.0673
¥76.7609
¥63.9354
¥56.9859
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
600预期 2027/1/11
¥118.9438
¥87.1795
¥76.5914
¥61.0426
¥60.9635
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
800预期 2027/1/13
剪切带
¥94.8748
¥53.0196
¥51.0308
¥41.6857
卷轴
¥41.6066
最低: 1
倍数: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, + 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
573预期 2027/1/11
¥94.3776
¥61.2912
¥53.2682
¥47.9798
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
800预期 2027/1/11
剪切带
¥86.9309
¥48.2284
¥45.5729
¥37.2222
卷轴
¥37.2222
最低: 1
倍数: 1
: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, + 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
588预期 2027/1/13
¥85.8574
¥54.5903
¥47.3922
¥41.8552
最低: 1
倍数: 1
Through Hole TO-247AD-4 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay / Siliconix 碳化硅MOSFET 1200-V N-CHANNEL SIC MOSFET
600预期 2028/4/24
¥136.3119
¥78.9983
¥73.5291
¥66.8395
¥66.7491
最低: 1
倍数: 1
Through Hole TO-247AD-3L 1 Channel 1.2 kV 53 A 54 mOhms - 10 V, + 22 V 2.9 V 69 nC - 55 C + 175 C 288 W Enhancement