|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥177.4213
-
957库存量
-
2,160在途量
|
Mouser 零件编号
726-IMZC120R017M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
957库存量
2,160在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥130.854
-
530库存量
-
2,160在途量
|
Mouser 零件编号
726-IMZC120R026M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
530库存量
2,160在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
¥102.8978
-
1,519库存量
-
240在途量
|
Mouser 零件编号
726-IMZC120R040M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,519库存量
240在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥85.4506
-
374库存量
-
480预期 2026/12/14
|
Mouser 零件编号
726-IMZC120R053M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
374库存量
480预期 2026/12/14
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥236.8141
-
53库存量
-
3,360在途量
|
Mouser 零件编号
726-IMZC120R012M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
53库存量
3,360在途量
在途量:
240 预期 2026/12/3
240 预期 2026/12/11
1,440 预期 2027/1/7
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥105.881
-
22库存量
-
1,440在途量
|
Mouser 零件编号
726-IMZC120R034M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
22库存量
1,440在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥157.409
-
2,710在途量
|
Mouser 零件编号
726-IMZC120R022M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
2,710在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
¥76.1846
-
2,860在途量
|
Mouser 零件编号
726-IMZC120R078M2HXK
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
2,860在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|