结果: 8
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2 593库存量
480预期 2026/10/14
¥172.7092
¥124.7407
¥108.3557
¥103.4741
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,335库存量
¥153.2732
¥105.542
¥91.1571
¥84.9534
¥80.9758
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2 229库存量
720预期 2026/10/14
¥129.0347
¥73.6986
¥68.5684
¥68.2407
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 683库存量
240预期 2026/10/26
¥103.7227
¥57.3249
¥54.2626
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2 627库存量
¥84.0381
¥45.4147
¥41.9343
¥41.8552
¥41.1885
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 9库存量
960在途量
¥220.1918
¥141.1144
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2 5库存量
960在途量
¥78.6593
¥42.2733
¥38.9624
¥34.8266
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
1,992在途量
¥102.2424
¥57.4831
¥52.5224
¥50.2963
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC