|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥172.7092
-
593库存量
-
480预期 2026/10/14
-
新产品
|
Mouser 零件编号
726-IMZC120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
593库存量
480预期 2026/10/14
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥153.2732
-
1,335库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,335库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥129.0347
-
229库存量
-
720预期 2026/10/14
-
新产品
|
Mouser 零件编号
726-IMZC120R026M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
229库存量
720预期 2026/10/14
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
683库存量
-
240预期 2026/10/26
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
683库存量
240预期 2026/10/26
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
627库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
627库存量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥220.1918
-
9库存量
-
960在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
9库存量
960在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
¥78.6593
-
5库存量
-
960在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R078M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
5库存量
960在途量
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
¥102.2424
-
1,992在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R040M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1,992在途量
在途量:
720 预期 2026/10/23
1,032 预期 2026/10/26
240 预期 2026/11/12
|
|
最低: 1
倍数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|