|
|
绝缘栅双极晶体管(IGBT) 900V 8A 2.5V XPT 绝缘栅双极晶体管(IGBT) GenX3
- IXYY8N90C3
- IXYS
-
1:
¥37.4708
-
409库存量
|
Mouser 零件编号
747-IXYY8N90C3
|
IXYS
|
绝缘栅双极晶体管(IGBT) 900V 8A 2.5V XPT 绝缘栅双极晶体管(IGBT) GenX3
|
|
409库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-252-3
|
SMD/SMT
|
Single
|
900 V
|
3 V
|
- 20 V, 20 V
|
20 A
|
125 W
|
- 55 C
|
+ 175 C
|
Planar
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) IGBT, Diode 1200V, 75A
- IXGH40N120B2D1
- IXYS
-
1:
¥183.5459
-
56库存量
|
Mouser 零件编号
747-IXGH40N120B2D1
|
IXYS
|
绝缘栅双极晶体管(IGBT) IGBT, Diode 1200V, 75A
|
|
56库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
1.2 kV
|
3.5 V
|
- 20 V, 20 V
|
75 A
|
380 W
|
- 55 C
|
+ 150 C
|
IXGH40N120
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 20 Amps 1700 V 4 V Rds
- IXGT10N170
- IXYS
-
1:
¥181.3085
-
18库存量
|
Mouser 零件编号
747-IXGT10N170
|
IXYS
|
绝缘栅双极晶体管(IGBT) 20 Amps 1700 V 4 V Rds
|
|
18库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
D3PAK-3 (TO-268-3)
|
SMD/SMT
|
Single
|
1.7 kV
|
2.7 V
|
- 20 V, 20 V
|
20 A
|
110 W
|
- 55 C
|
+ 150 C
|
IXGT10N170
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) XPT IGBT C3-Class 600V/190Amp
- IXXH100N60C3
- IXYS
-
1:
¥138.3798
-
1库存量
|
Mouser 零件编号
747-IXXH100N60C3
|
IXYS
|
绝缘栅双极晶体管(IGBT) XPT IGBT C3-Class 600V/190Amp
|
|
1库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD
|
Through Hole
|
Single
|
600 V
|
2.2 V
|
- 20 V, 20 V
|
190 A
|
830 W
|
- 55 C
|
+ 150 C
|
IXXH100N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) XPT 600V IGBT 300A
- IXXK300N60B3
- IXYS
-
1:
¥328.2198
-
42库存量
|
Mouser 零件编号
747-IXXK300N60B3
|
IXYS
|
绝缘栅双极晶体管(IGBT) XPT 600V IGBT 300A
|
|
42库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
|
Through Hole
|
Single
|
600 V
|
1.6 V
|
- 20 V, 20 V
|
550 A
|
2.3 kW
|
- 55 C
|
+ 175 C
|
IXXK300N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
- IXYK110N120B4
- IXYS
-
1:
¥156.5841
-
1库存量
-
300预期 2026/10/7
|
Mouser 零件编号
747-IXYK110N120B4
|
IXYS
|
绝缘栅双极晶体管(IGBT) XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
|
|
1库存量
300预期 2026/10/7
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-264-3
|
Through Hole
|
Single
|
1.2 kV
|
2.1 V
|
- 20 V, 20 V
|
340 A
|
1.36 kW
|
- 55 C
|
+ 175 C
|
1200V XPTTM Gen 5
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) GenX3 1200V IGBT
- IXGA30N120B3
- IXYS
-
1:
¥110.6722
-
4,100在途量
|
Mouser 零件编号
747-IXGA30N120B3
|
IXYS
|
绝缘栅双极晶体管(IGBT) GenX3 1200V IGBT
|
|
4,100在途量
在途量:
3,300 预期 2026/12/7
800 预期 2027/1/25
|
|
最低: 1
倍数: 1
|
|
|
Si
|
D2PAK-3 (TO-263-3)
|
SMD/SMT
|
Single
|
1.2 kV
|
3.05 V
|
- 20 V, 20 V
|
60 A
|
300 W
|
- 55 C
|
+ 150 C
|
IXGA30N120
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) TO264 2500V 75A IGBT
- IXGK75N250
- IXYS
-
1:
¥1,279.2052
-
235预期 2026/12/21
|
Mouser 零件编号
747-IXGK75N250
|
IXYS
|
绝缘栅双极晶体管(IGBT) TO264 2500V 75A IGBT
|
|
235预期 2026/12/21
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-264
|
Through Hole
|
Single
|
2.5 kV
|
2.7 V
|
- 20 V, 20 V
|
170 A
|
780 W
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) Mid-Frequency Range 15khz-40khz w/ Diode
- IXGR72N60B3H1
- IXYS
-
1:
¥238.0571
-
793在途量
|
Mouser 零件编号
747-IXGR72N60B3H1
|
IXYS
|
绝缘栅双极晶体管(IGBT) Mid-Frequency Range 15khz-40khz w/ Diode
|
|
793在途量
在途量:
193 预期 2026/11/3
300 预期 2026/11/9
300 预期 2027/2/8
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
600 V
|
1.5 V
|
20 V
|
80 A
|
200 W
|
- 55 C
|
+ 150 C
|
IXGR72N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 650V/106A TRENCH IGBT GENX4 XPT
- IXXH60N65B4H1
- IXYS
-
1:
¥136.5605
-
2,380库存量
-
1,590预期 2026/10/26
|
Mouser 零件编号
747-IXXH60N65B4H1
|
IXYS
|
绝缘栅双极晶体管(IGBT) 650V/106A TRENCH IGBT GENX4 XPT
|
|
2,380库存量
1,590预期 2026/10/26
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
650 V
|
2.2 V
|
- 20 V, 20 V
|
145 A
|
536 W
|
- 55 C
|
+ 175 C
|
Trench
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) High Voltage XPT IGBT
- IXYX40N450HV
- IXYS
-
1:
¥682.0793
-
250预期 2027/3/3
|
Mouser 零件编号
747-IXYX40N450HV
|
IXYS
|
绝缘栅双极晶体管(IGBT) High Voltage XPT IGBT
|
|
250预期 2027/3/3
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247-PLUS-HV-3
|
Through Hole
|
Single
|
4.5 kV
|
3.9 V
|
- 20 V, 20 V
|
95 A
|
660 W
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) SMPDB 3KV 22A IGBT
- MMIX4B22N300
- IXYS
-
1:
¥1,151.244
-
217预期 2026/12/23
|
Mouser 零件编号
747-MMIX4B22N300
|
IXYS
|
绝缘栅双极晶体管(IGBT) SMPDB 3KV 22A IGBT
|
|
217预期 2026/12/23
|
|
最低: 1
倍数: 1
|
|
|
Si
|
|
SMD/SMT
|
Quad
|
3 kV
|
2.7 V
|
- 20 V, 20 V
|
38 A
|
150 W
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) BIMOSFETS 1700V 60A
- IXBH24N170
- IXYS
-
1:
¥288.5907
-
299预期 2026/11/16
|
Mouser 零件编号
747-IXBH24N170
|
IXYS
|
绝缘栅双极晶体管(IGBT) BIMOSFETS 1700V 60A
|
|
299预期 2026/11/16
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247-3
|
Through Hole
|
Single
|
1.7 kV
|
2.5 V
|
- 20 V, 20 V
|
60 A
|
250 W
|
- 55 C
|
+ 150 C
|
IXBH24N170
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) High Frequency Range 40khz C-IGBT w/Diod
- IXGH30N60C3D1
- IXYS
-
1:
¥102.4797
-
267预期 2027/6/21
|
Mouser 零件编号
747-IXGH30N60C3D1
|
IXYS
|
绝缘栅双极晶体管(IGBT) High Frequency Range 40khz C-IGBT w/Diod
|
|
267预期 2027/6/21
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
600 V
|
2.6 V
|
20 V
|
60 A
|
220 W
|
- 55 C
|
+ 150 C
|
IXGH30N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) GenX3 600V 绝缘栅双极晶体管(IGBT)
- IXGH36N60B3
- IXYS
-
1:
¥60.0482
-
3,611预期 2027/1/25
|
Mouser 零件编号
747-IXGH36N60B3
|
IXYS
|
绝缘栅双极晶体管(IGBT) GenX3 600V 绝缘栅双极晶体管(IGBT)
|
|
3,611预期 2027/1/25
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
600 V
|
1.8 V
|
- 20 V, 20 V
|
92 A
|
250 W
|
- 55 C
|
+ 150 C
|
IXGH36N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 30 Amps 600V
- IXGH48N60C3D1
- IXYS
-
1:
¥101.248
-
1,738预期 2027/2/16
|
Mouser 零件编号
747-IXGH48N60C3D1
|
IXYS
|
绝缘栅双极晶体管(IGBT) 30 Amps 600V
|
|
1,738预期 2027/2/16
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
600 V
|
2.5 V
|
- 20 V, 20 V
|
75 A
|
300 W
|
- 55 C
|
+ 150 C
|
IXGH48N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 20 Amps 1700 V 7 V Rds
- IXGT10N170A
- IXYS
-
1:
¥187.7608
-
300预期 2026/11/9
|
Mouser 零件编号
747-IXGT10N170A
|
IXYS
|
绝缘栅双极晶体管(IGBT) 20 Amps 1700 V 7 V Rds
|
|
300预期 2026/11/9
|
|
最低: 1
倍数: 1
|
|
|
Si
|
D3PAK-3 (TO-268-3)
|
SMD/SMT
|
Single
|
1.7 kV
|
6 V
|
- 20 V, 20 V
|
10 A
|
140 W
|
- 55 C
|
+ 150 C
|
IXGT10N170
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) TO263 1200V 30A XPT
- IXYA30N120A4HV
- IXYS
-
1:
¥86.6032
-
750预期 2027/3/10
|
Mouser 零件编号
747-IXYA30N120A4HV
|
IXYS
|
绝缘栅双极晶体管(IGBT) TO263 1200V 30A XPT
|
|
750预期 2027/3/10
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-263HV-3
|
SMD/SMT
|
Single
|
1.2 kV
|
1.9 V
|
- 20 V, 20 V
|
106 A
|
500 W
|
- 55 C
|
+ 175 C
|
Trench
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) TO247 1700V 24A DIODE
- IXYH24N170CV1
- IXYS
-
1:
¥187.0263
-
298预期 2027/4/5
|
Mouser 零件编号
747-IXYH24N170CV1
|
IXYS
|
绝缘栅双极晶体管(IGBT) TO247 1700V 24A DIODE
|
|
298预期 2027/4/5
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247-3
|
Through Hole
|
Single
|
1.7 kV
|
4 V
|
- 20 V, 20 V
|
58 A
|
500 W
|
- 55 C
|
+ 175 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) TO247 1200V 40A GENX3
- IXYH40N120B3
- IXYS
-
1:
¥91.8125
-
288预期 2027/6/14
|
Mouser 零件编号
747-IXYH40N120B3
|
IXYS
|
绝缘栅双极晶体管(IGBT) TO247 1200V 40A GENX3
|
|
288预期 2027/6/14
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) TO263 2500V 8A XPT
- IXYH8N250CHV
- IXYS
-
1:
¥188.4275
-
390预期 2027/2/2
|
Mouser 零件编号
747-IXYH8N250CHV
|
IXYS
|
绝缘栅双极晶体管(IGBT) TO263 2500V 8A XPT
|
|
390预期 2027/2/2
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247HV-3
|
Through Hole
|
Single
|
2.5 kV
|
4 V
|
- 20 V, 20 V
|
29 A
|
280 W
|
- 55 C
|
+ 175 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 2500V/95A , HV XPT IGBT
- IXYT25N250CHV
- IXYS
-
1:
¥338.0621
-
330预期 2027/4/14
|
Mouser 零件编号
747-IXYT25N250CHV
|
IXYS
|
绝缘栅双极晶体管(IGBT) 2500V/95A , HV XPT IGBT
|
|
330预期 2027/4/14
|
|
最低: 1
倍数: 1
|
|
|
Si
|
D3PAK-3 (TO-268-3)
|
SMD/SMT
|
Single
|
2.5 kV
|
4 V
|
- 20 V, 20 V
|
95 A
|
937 W
|
- 55 C
|
+ 175 C
|
High Voltage
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 75 Amps 600V 1.05 V Rds
- IXGH48N60B3D1
- IXYS
-
1:
¥77.5858
-
284预期 2026/11/30
|
Mouser 零件编号
747-IXGH48N60B3D1
|
IXYS
|
绝缘栅双极晶体管(IGBT) 75 Amps 600V 1.05 V Rds
|
|
284预期 2026/11/30
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247AD-3
|
Through Hole
|
Single
|
600 V
|
1.8 V
|
- 20 V, 20 V
|
48 A
|
300 W
|
- 55 C
|
+ 150 C
|
IXGH48N60
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
- IXYH90N65A5
- IXYS
-
1:
¥97.7676
-
71库存量
|
Mouser 零件编号
747-IXYH90N65A5
|
IXYS
|
绝缘栅双极晶体管(IGBT) XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
|
|
71库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-247-3
|
Through Hole
|
Single
|
650 V
|
1.35 V
|
- 20 V, 20 V
|
220 A
|
650 W
|
- 55 C
|
+ 175 C
|
|
Tube
|
|
|
|
绝缘栅双极晶体管(IGBT) 650V, 35A, XPT Gen5 C5 IGBT in TO-220
- IXYP35N65C5
- IXYS
-
1:
¥57.8221
-
300预期 2026/10/26
|
Mouser 零件编号
747-IXYP35N65C5
|
IXYS
|
绝缘栅双极晶体管(IGBT) 650V, 35A, XPT Gen5 C5 IGBT in TO-220
|
|
300预期 2026/10/26
|
|
最低: 1
倍数: 1
|
|
|
Si
|
TO-220-3L
|
Through Hole
|
Single
|
650 V
|
1.7 V
|
20 V
|
90 A
|
326 W
|
- 55 C
|
+ 175 C
|
Trench
|
Tube
|
|