CoolSiC™ JFET Transistors

Infineon Technologies CoolSiC™ JFET Transistors are designed to meet the growing demand for high-performance, solid-state power distribution and protection in rapidly evolving environments. These transistors deliver 750V and 1200V voltages, enabling system designers to push efficiency and reliability to the next level. The CoolSiC™ JFET transistors feature an extremely low on-resistance of 1.6mΩ which helps minimize conduction losses. These transistors offer .XT interconnection technology, which ensures improved thermal performance and high robustness under pulsed and cyclic loads. The CoolSiC™ JFET-based solid-state designs enable higher switching speeds and allow rapid fault isolation, reduce system damage risk, minimize downtime, and contribute to longer system lifetime. Typical applications include AI data centers, solid-state protection, industrial power systems, and motor soft starters, and surge protection.

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 配置 Vds-漏源极击穿电压 Vgs-栅源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Pd-功率耗散 最小工作温度 最大工作温度 封装
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 598 A 6.5 mOhms 2.38 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 522 A 7.3 mOhms 2.142 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 289 A 14.3 mOhms 1.127 kW - 55 C + 175 C Reel, Cut Tape
Infineon Technologies JFET CoolSiC JFET 1200 V J1 in QDPAK

SiC SMD/SMT PG-HDSOP-22 N-Channel Single 1.2 kV - 20 V, + 2.2 V 238 A 17.5 mOhms 931 W - 55 C + 175 C Reel, Cut Tape