P-Channel MOSFETs

Toshiba P-Channel MOSFETs product offering features P-channel power MOSFETs for load switching in ultra-portable mobile computing devices and battery protection circuits for large capacity batteries. Developed using advanced trench-gate processes and packaging technologies, the P-channel MOSFETs are optimized to provide low on-resistance. These low on-resistance power MOSFETs also offer high current ratings, low capacitance, and high permissible power dissipation within a small form factor to meet the lower voltage and lower power requirements of system power supplies in portable electronics applications.

结果: 2
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET P-Channel Mosfet 20V UMOS-VI 1,024库存量
20,000预期 2026/10/19
剪切带
¥21.2553
¥11.8311
¥9.3451
¥7.4354
卷轴
¥5.989
最低: 1
倍数: 1
: 5,000
Si SMD/SMT SOP-8 P-Channel 1 Channel 20 V 60 A 1.7 mOhms 12 V 500 mV 182 nC - 55 C + 150 C 78 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Channel Mosfet 20V UMOS-VI
29,964预期 2026/10/16
剪切带
¥12.4074
¥5.8195
¥5.1754
¥4.0228
卷轴
¥2.8363
最低: 1
倍数: 1
: 5,000
Si SMD/SMT TSON-8 P-Channel 1 Channel 20 V 36 A 4.7 mOhms 12 V 500 mV 65 nC - 55 C + 150 C 42 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel