DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

结果: 19
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET Power MOSFET N-Channel 637库存量
¥52.1156
¥37.2222
¥27.459
¥24.3967
¥21.8316
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) 4,891库存量
剪切带
¥56.9068
¥30.2727
¥28.5325
卷轴
¥28.5325
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape
Toshiba MOSFET Power MOSFET N-Channel 88库存量
¥49.6296
¥25.6397
¥23.165
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 14库存量
¥91.6543
¥54.2626
¥52.6919
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 36库存量
¥115.6329
¥90.739
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 97库存量
¥50.7822
¥26.555
¥24.1481
¥20.1027
¥19.436
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET Power MOSFET N-Channel 51库存量
¥52.0252
¥34.0808
¥25.0634
¥22.2497
¥19.7637
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET Power MOSFET N-Channel 75库存量
¥49.381
¥29.4478
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET Power MOSFET N-Channel 77库存量
¥47.4826
¥29.0297
¥22.0802
¥20.1027
¥19.0292
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) 48库存量
¥54.6807
¥35.821
¥26.3064
¥23.4136
¥21.0067
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 69库存量
¥55.9124
¥34.8266
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46库存量
¥70.06
¥38.0471
¥34.9057
¥32.4197
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 40mOhmmax 60库存量
¥105.0448
¥87.1795
¥79.9814
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-247-4L PD=400W 1MHz PWR MOSFET TRNS 5库存量
¥132.6733
¥76.6818
¥74.693
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET Power MOSFET N-Channel
90预期 2026/10/12
¥46.895
¥24.5662
¥21.5039
¥18.9388
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 无库存交货期 24 周
¥45.4147
¥23.7413
¥21.5039
¥18.193
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR DFN 8x8 PD=180W F=1MHZ 无库存交货期 16 周
卷轴
¥18.3625
最低: 2,500
倍数: 2,500
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ 无库存交货期 16 周
卷轴
¥18.532
最低: 2,500
倍数: 2,500
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET 180W 1MHZ POWER MOSFET TRANSISTOR 无库存交货期 16 周
卷轴
¥18.3625
最低: 2,500
倍数: 2,500
: 2,500
Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel