StrongIRFET™ 2功率MOSFET

英飞凌科技StrongIRFET™ 2功率MOSFET是N沟道、正常电平、100%经过雪崩测试的MOSFET。英飞凌StrongIRFET 2 MOSFET优化用于各种应用。这些MOSFET具有80V至100V的VDS 范围和2.4mΩ至8.2mΩ的RDS(on) 范围。

结果: 74
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET IFX FET 60V 5,961库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 223 A 1.7 mOhms 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 737库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 125 A 1.8 mOhms 20 V 2.35 V 46 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET StrongIRFET 2 Power -Transistor, 30 V in DPAK 774库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 30 V 122 A 2.05 mOhms 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 2,193库存量
最低: 1
倍数: 1
: 2,000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 71 A 4.7 mOhms 20 V 2.35 V 10 nC - 55 C + 175 C 65 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IR FET UP TO 60V 3,986库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 121 A 2.35 mOhms 20 V 2.35 V 50 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 2,919库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 53 A 4.35 mOhms 20 V 2.35 V 27 nC - 55 C + 175 C 75 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 3,022库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 53 A 4.95 mOhms 20 V 2.35 V 21 nC - 55 C + 175 C 65 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1,417库存量
最低: 1
倍数: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 294 A 1.75 mOhms 20 V 2.2 V 130 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,223库存量
最低: 1
倍数: 1
: 1,800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 236 A 2.25 mOhms 20 V 2.2 V 103 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 774库存量
最低: 1
倍数: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 139 A 2.85 mOhms 20 V 2.1 V 68 nC - 55 C + 175 C 150 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 1,695库存量
最低: 1
倍数: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 52 A 13 mOhms 20 V 2.2 V 18.6 nC - 55 C + 175 C 71 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,997库存量
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 83 A 3 mOhms 20 V 3 V 154 nC - 55 C + 175 C 41 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 949库存量
1,600预期 2026/10/19
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 170 A 1.65 mOhms 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 1,795库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 867库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 139 A 4.25 mOhms 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1,458库存量
最低: 1
倍数: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 118 A 5.2 mOhms 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 992库存量
最低: 1
倍数: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 98 A 5.5 mOhms 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 238库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 232 A 1.35 mOhms 20 V 2.1 V 106 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IR FET UP TO 60V 440库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 210 A 1.05 mOhms 20 V 2.35 V 224 nC - 55 C + 175 C 3.8 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 739库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 125 A 2.05 mOhms 20 V 2.35 V 69 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 1,669库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 78 A 3.3 mOhms 20 V 2.35 V 3 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET > 60-80V 4,246库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 282 A 1.4 mOhms 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 4,900库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 197 A 1.3 mOhms 20 V 3.4 V 159 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 2,735库存量
9,000在途量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 193 A 1.5 mOhms 20 V 3.4 V 106 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IR FET UP TO 60V 2,799库存量
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 30 V 128 A 1.8 mOhms 20 V 2.35 V 95 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Tube