StrongIRFET™ 2功率MOSFET

英飞凌科技StrongIRFET™ 2功率MOSFET是N沟道、正常电平、100%经过雪崩测试的MOSFET。英飞凌StrongIRFET 2 MOSFET优化用于各种应用。这些MOSFET具有80V至100V的VDS 范围和2.4mΩ至8.2mΩ的RDS(on) 范围。

结果: 74
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET IFX FET >80 - 100V 1,338库存量
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 6,337库存量
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 115 A 4 mOhms 20 V 3.8 V 54 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 3,967库存量
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube

Infineon Technologies MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC 2,434库存量
1,600预期 2026/12/10
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 426 A 1.2 mOhms 20 V 3.9 V 300 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 40V 120A 2.5mOhm 90nC StrongIRFET 2,706库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 208 A 2.5 mOhms 20 V 3.9 V 135 nC - 55 C + 175 C 208 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 19库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 2.4 mOhms 20 V 2.2 V 89 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 379库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 4 mOhms 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 379库存量
1,000预期 2027/6/3
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 182 A 2.4 mOhms 20 V 3.8 V 89 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 911库存量
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 100 V 52 A 12.9 mOhms 20 V 3.8 V 19 nC - 55 C + 175 C 71 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 213库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 293 A 1.05 mOhms 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 544库存量
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 46 A 8.2 mOhms 20 V 3.8 V 42 nC - 55 C + 175 C 35 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 53库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 187 A 1.8 mOhms 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 124库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 166 A 1.95 mOhms 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 415库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 259 A 1.7 mOhms 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 551库存量
1,000预期 2026/10/15
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 935库存量
1,000预期 2026/12/10
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 119 A 3.05 mOhms 20 V 3.3 V 68 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 53库存量
2,000预期 2026/11/12
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 80 A 4 mOhms 20 V 3.3 V 38 nC - 55 C + 175 C 107 W Enhancement Tube
Infineon Technologies MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 143W 986库存量
4,000在途量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 2.5 mOhms 20 V 1.8 V 135 nC - 55 C + 175 C 143 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W 1,851库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 123 A 3.3 mOhms 20 V 1.8 V 93 nC - 55 C + 175 C 99 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET > 60-80V
1,990预期 2026/10/19
最低: 1
倍数: 1

Si Through Hole N-Channel 1 Channel 80 V 196 A 1.6 mOhms 20 V 3.8 V 170 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V
2,387预期 2026/12/10
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 135 A 4.35 mOhms 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 40V
799预期 2026/9/24
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 191 A 1.45 mOhms 20 V 2.1 V 106 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 无库存交货期 8 周
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 94 A 5.5 mOhms 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 无库存交货期 18 周
最低: 800
倍数: 800
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 209 A 2.3 mOhms 20 V 2.2 V 89 nC - 55 C + 175 C 214 W Enhancement Reel