Q6422XM3BDGVK-U

Name: Kingston Q6422XM3BDGVK-U
Brand: Kingston
SKU: 524-Q6422XM3BDGVK-U
Price: 2939.79 RMB
Availability: InStock

图像仅供参考
请参阅产品规格

Mouser编号：

524-Q6422XM3BDGVK-U

制造商编号：

Q6422XM3BDGVK-U

制造商：

Kingston

说明：

动态随机存取存储器 64Gb 200 ball LPDDR4x 4266Mhz

寿命周期:

寿命结束:

将过时且制造商将停产。

数据表:

Q6422XM3BDGVK-U 数据表 (PDF)

ECAD模型:

下载免费库加载程序，将此文件转换，以供您的ECAD工具使用。了解详情。

更多信息

了解Kingston Q6422XM3BDGVK-U详情

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

产品属性	属性值	选择属性
制造商:	Kingston
产品种类:	动态随机存取存储器
RoHS:
类型:	SDRAM - LPDDR4
存储容量:	64 Gbit
数据总线宽度:	32 bit
最大时钟频率:	2.133 GHz
封装 / 箱体:	FBGA-200
组织:	2048 M x 32
电源电压-最小:	600 mV
电源电压-最大:	1.8 V
最小工作温度:	- 25 C
最大工作温度:	+ 85 C
封装:	Tray
商标:	Kingston
湿度敏感性:	Yes
安装风格:	SMD/SMT
产品类型:	DRAM
工厂包装数量:	15
子类别:	Memory & Data Storage

找到的产品:

要显示类似产品，至少选中一个复选框

要显示该类别下的类似产品，请至少选中上方的一个复选框。

已选择的属性: 0

                        
The factory is currently not accepting orders for this product.

筛选文档:

合规代码

CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

原产地分类

原产国:: 中国台湾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

LPDDR4x Low-Power DRAMs

Kingston LPDDR4x Low-Power DRAMs support data rates up to 4266Mb/s and maintain backward compatibility with lower speeds such as 3733, 3200, and 2666. These devices offer 16Gb and 32Gb device densities with double-data-rate architecture. The LPDDR4x DRAMs feature per-bank refresh, Partial Array Self-Refresh (PASR), and Auto Temperature Compensated Self-Refresh (ATCSR) power-saving options. These devices include eight internal banks per channel for concurrent operation, Burst Lengths (BL), programmable Read Latency (RL), and Write Latency (WL). The LPDDR4x DRAMs operate with multiple low‑voltages and are available in a 200-ball FBGA package.

LPDDR4 DRAM Devices

Kingston LPDDR4 DRAM Devices feature low power consumption and an auto precharge option for each burst access. These DRAM devices offer DMI pin support for write data masking and DBIdc functionality. The LPDDR4 DRAM devices are packaged in FBGA-200 and have 8Gbits die density. These DRAM devices feature Auto Temperature Compensated Self-Refresh (ATCSR) by a built-in temperature sensor and per bank refresh. The LPDDR4 DRAM devices operate at -25°C to 85°C temperature range, 1.6GHz maximum clock frequency, and 1.06V to 1.95V supply voltage range.