您似乎禁用了您浏览器中的JavaScript功能。本网页上的某些功能需要登录后才能使用。

G2R1000MT33J-TR

Name: Navitas Semiconductor G2R1000MT33J-TR
Brand: GeneSiC Semiconductor
SKU: 905-G2R1000MT33J-TR
Price: 199.03 RMB
Availability: OutOfStock

图像仅供参考
请参阅产品规格

Mouser编号：

905-G2R1000MT33J-TR

制造商编号：

G2R1000MT33J-TR

制造商：

GeneSiC Semiconductor

说明：

碳化硅MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET

ECAD模型:

下载免费库加载程序，将此文件转换，以供您的ECAD工具使用。了解详情。

更多信息

了解GeneSiC Semiconductor G2R1000MT33J-TR详情

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

产品属性	属性值	选择属性
制造商:	Navitas Semiconductor
产品种类:	碳化硅MOSFET
RoHS:
商标:	GeneSiC Semiconductor
封装:	Reel
封装:	Cut Tape
产品类型:	SiC MOSFETS
系列:	G2R
工厂包装数量:	800
子类别:	Transistors

找到的产品:

要显示类似产品，至少选中一个复选框

要显示该类别下的类似产品，请至少选中上方的一个复选框。

已选择的属性: 0

筛选文档:

PCN

Product Change Notification 2026-5-5 (PDF)

合规代码

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

原产地分类

原产国:: 菲律宾
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. GeneSiC Semiconductor 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.

3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.