中国
TPH7R506NH,L1Q
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请参阅产品规格
请参阅产品规格
757-TPH7R506NHL1Q
TPH7R506NH,L1Q
制造商：
说明：
MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET
MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET
数据表
Application Notes
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
原产地分类
- 原产国:
- 马来西亚
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 不可用
库存量: 15,494
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库存：
-
15,494 可立即发货出现意外错误。请稍候重试。
-
生产周期：
-
24 周 大于所示数量的预计工厂生产时间。