Low Noise FETs & ICs

CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.

结果: 9
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 晶体管类型 技术 工作频率 增益 Vds-漏源极击穿电压 Vgs-栅源极击穿电压 Id-连续漏极电流 最小工作温度 最大工作温度 Pd-功率耗散 安装风格 封装 / 箱体 封装
CEL 射频结栅场效应晶体管(RF JFET)晶体管 RF Low Noise FET 4-Pin Flat-lead 2,113库存量
¥13.0741
¥8.6897
¥7.2433
¥6.9947
¥6.5879
最低: 1
倍数: 1
pHEMT Si 12 GHz 14.1 dB 2 V - 400 mV 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Bulk
CEL 射频结栅场效应晶体管(RF JFET)晶体管 20GHz NF .70dB Ga 11.9dB -55C +125C 3,035库存量
¥30.849
¥20.1818
¥14.7239
¥12.3283
最低: 1
倍数: 1
pHEMT GaAs 20 GHz 11.9 dB 3 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Bulk
CEL 射频结栅场效应晶体管(RF JFET)晶体管 20GHz NF .55dB Ga 13.8dB -55C +125C 14,550库存量
剪切带
¥19.1874
¥13.0741
¥11.0062
¥10.8367
卷轴
¥10.17
最低: 1
倍数: 1
: 10,000
pHEMT GaAs 24 GHz 13.8 dB 4 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT MICRO-X-4 Reel, Cut Tape, MouseReel
CEL 射频结栅场效应晶体管(RF JFET)晶体管 12GHz NF .3dB Ga 13.7dB -55C +125C 4,516库存量
¥18.193
¥12.3283
¥10.4186
¥10.0118
最低: 1
倍数: 1
pHEMT GaAs 12 GHz 13.7 dB 4 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT MICRO-X-4 Bulk
CEL 射频结栅场效应晶体管(RF JFET)晶体管 12GHz NF .3dB Ga 13.7dB -55C +125C 12,003库存量
剪切带
¥14.0572
¥9.4242
¥7.8535
¥7.5936
卷轴
¥7.1868
最低: 1
倍数: 1
: 10,000
pHEMT GaAs 12 GHz 13.7 dB 4 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT MICRO-X-4 Reel, Cut Tape, MouseReel
CEL 射频结栅场效应晶体管(RF JFET)晶体管 12GHz NF .42dB Ga 12.2dB -55C +125C 3,029库存量
¥24.6453
¥15.9669
¥8.0456
¥7.6727
最低: 1
倍数: 1
pHEMT GaAs 12 GHz 12.2 dB 4 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Bulk
CEL 射频结栅场效应晶体管(RF JFET)晶体管 12GHz NF .42dB Ga 12.2dB -55C +125C 20,618库存量
剪切带
¥10.6672
¥7.0512
¥5.8534
¥5.6274
卷轴
¥5.3223
最低: 1
倍数: 1
: 15,000
pHEMT GaAs 12 GHz 12.2 dB 4 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Reel, Cut Tape, MouseReel
CEL 射频结栅场效应晶体管(RF JFET)晶体管 RF Low Noise FET 4-Pin Flat-lead 12,162库存量
剪切带
¥15.8765
¥10.17
¥7.0173
¥5.9551
卷轴
¥4.7347
最低: 1
倍数: 1
: 15,000
Si 12 GHz 14.1 dB 2 V - 400 mV 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Reel, Cut Tape, MouseReel
CEL 射频结栅场效应晶体管(RF JFET)晶体管 20GHz NF .70dB Ga 11.9dB -55C +125C 无库存交货期 20 周
卷轴
¥8.2716
最低: 15,000
倍数: 15,000
: 15,000
pHEMT GaAs 20 GHz 11.9 dB 3 V - 3 V 10 mA - 55 C + 125 C 125 mW SMD/SMT minimold-4 Reel