STMicroelectronics M 系列 绝缘栅双极晶体管(IGBT)

结果: 9
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 封装
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT 1,074库存量
¥73.6195
¥40.2845
¥34.9848
最低: 1
倍数: 1
Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
349库存量
¥62.2856
¥41.6857
¥33.5045
¥29.7755
¥26.3855
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
457库存量
¥47.1436
¥28.7811
¥22.4983
¥18.532
¥17.8653
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package 878库存量
¥53.5168
¥35.0752
¥25.8092
¥22.9164
¥20.3513
最低: 1
倍数: 1
Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
1,393预期 2026/11/2
¥53.4377
¥34.9848
¥25.7301
¥22.9164
¥20.3513
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
600预期 2027/6/25
¥51.6975
¥29.3687
¥27.5494
¥21.8316
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
586预期 2026/12/11
¥48.6352
¥31.8434
¥23.7413
¥19.8541
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
592预期 2027/3/12
¥41.0303
¥26.8827
¥20.0123
¥16.7918
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 无库存交货期 22 周
¥58.5679
¥39.211
¥31.5157
¥27.9562
¥24.8148
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube