IXYS MOSFET

结果: 1,583
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
IXYS MOSFET 82 Amps 250V 0.035 Rds 260库存量
¥100.2536
¥55.1666
¥51.9461
最低: 1
倍数: 1
Si Through Hole TO-3P-3 N-Channel 1 Channel 250 V 82 A 35 mOhms 20 V 5 V 142 nC - 55 C + 150 C 500 W Enhancement Tube
IXYS MOSFET 3 Amps 1200V 4.5 Rds 1,528库存量
¥81.3939
¥58.3193
¥54.8389
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 22A 717库存量
¥90.4113
¥58.3193
¥45.991
¥44.9966
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 350 mOhms 30 V 5.5 V 58 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-247 Power MOSFET 468库存量
¥231.6839
¥152.6065
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET PolarHT HiperFET 100v, 170A 1,244库存量
¥151.6234
¥101.9938
¥86.3546
¥84.3658
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 9 mOhms 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A 214库存量
¥204.3944
¥130.1986
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 420 A 2.6 mOhms 20 V 5 V 670 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFET TO263 150V 44A P-CH TRENCH 1,570库存量
剪切带
¥79.326
¥43.9231
¥40.3636
¥35.9792
卷轴
¥35.9792
最低: 1
倍数: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 150 V 44 A 65 mOhms 15 V 2 V 175 nC - 55 C + 150 C 298 W Enhancement TrenchP Reel, Cut Tape, MouseReel
IXYS MOSFET TO247 N-CH 75V 140A 293库存量
¥257.0863
¥194.8007
¥178.5061
¥173.2855
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 140 A 11 mOhms 20 V 2 V 275 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET 120 Amps 250V 0.024 Rds 1,123库存量
¥166.5055
¥100.1745
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 120 A 24 mOhms 20 V 5 V 185 nC - 55 C + 175 C 700 W Enhancement PolarHT Tube
IXYS MOSFET 200 Amps 100V 0.0075 Rds 667库存量
¥164.189
¥100.1745
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 200 A 7.5 mOhms 20 V 5 V 240 nC - 55 C + 175 C 800 W Enhancement PolarHT Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 186库存量
¥264.4426
¥211.7507
¥177.0145
¥171.7148
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET -26.0 Amps -200V 0.170 Rds 370库存量
¥84.7048
¥45.8215
¥42.2733
¥41.6857
最低: 1
倍数: 1
Si Through Hole TO-3P-3 P-Channel 1 Channel 200 V 26 A 170 mOhms 20 V 4 V 56 nC - 55 C + 175 C 300 W Enhancement Tube

IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 110A 247库存量
¥314.5694
¥261.708
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 110 A 24 mOhms 20 V 4.5 V 500 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET 1.4 Amps 1200V 15 Rds 1,102库存量
¥49.7087
¥24.9843
¥21.5943
¥20.5999
最低: 1
倍数: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1.2 kV 1.4 A 15 Ohms 30 V 4.5 V 24.8 nC - 55 C + 150 C 86 W Enhancement Tube
IXYS MOSFET 44 Amps 1000V 0.22 Rds 469库存量
¥305.0548
¥233.4241
¥224.4067
最低: 1
倍数: 1
Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms 30 V 6.5 V 305 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET 120 Amps 150V 0.016 Rds 330库存量
¥105.0448
¥58.0707
¥55.257
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 120 A 16 mOhms 20 V 3 V 150 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET 16 Amps 800V 0.6 Rds 310库存量
¥91.8125
¥61.2121
¥51.3698
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 16 A 600 mOhms 30 V 5 V 71 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 30A 1,709库存量
¥112.1638
¥62.4551
¥60.2177
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 240 mOhms 30 V 2.5 V 82 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET 44 Amps 800V 253库存量
¥213.909
¥143.51
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 190 mOhms 30 V 3 V 198 nC - 55 C + 150 C 1.2 mW Enhancement HiPerFET Tube
IXYS MOSFET TRENCHT2 PWR MOSFET 75V 520A 1,162库存量
¥161.1267
¥101.8243
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 75 V 520 A 2.2 mOhms 20 V 5 V 545 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 72A N-CH X3CLASS 943库存量
¥106.2087
¥60.0482
¥56.0819
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 72 A 19 mOhms 20 V 2.5 V 82 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A 825库存量
¥148.6402
¥86.6823
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 360 A 2.9 mOhms 20 V 2.5 V 525 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 754库存量
¥228.9606
¥150.29
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 94 A 55 mOhms 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET 12.0 Amps 500 V 0.5 Ohm Rds 962库存量
¥48.9629
¥25.7301
¥22.4983
¥20.1818
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 12 A 500 mOhms 30 V 5.5 V 29 nC - 55 C + 150 C 200 W Enhancement Polar Tube
IXYS MOSFET TenchP Power MOSFET 1,824库存量
¥93.0555
¥55.1666
¥50.1268
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 200 V 32 A 130 mOhms 15 V 4 V 180 nC - 55 C + 150 C 300 W Enhancement Tube