PowerMESH MOSFET

结果: 12
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
STMicroelectronics MOSFET N-channel 1500 V 2.5 A PowerMESH 1,933库存量
4,200预期 2027/1/29
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.5 kV 2.5 A 9 Ohms - 20 V, 20 V 3 V 29.3 nC - 55 C + 150 C 63 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET 1500V 6Ohm 2.5A N-Channel 925库存量
2,000预期 2026/8/24
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.5 kV 2.5 A 9 Ohms - 30 V, 30 V 5 V 29.3 nC - 50 C + 150 C 140 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package 827库存量
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.7 kV 2.6 A 13 Ohms - 30 V, 30 V 3 V 44 nC - 55 C + 150 C 63 W Enhancement PowerMESH Tube

STMicroelectronics MOSFET N-channel 1500 V PowerMesh 1,400库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 4 A 7 Ohms - 30 V, 30 V 3 V 30 nC - 55 C + 150 C 160 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-Ch 600 Volt 40 Amp 46库存量
最低: 1
倍数: 1

Si SMD/SMT ISOTOP-4 N-Channel 1 Channel 600 V 40 A 130 mOhms - 30 V, 30 V 2 V 430 nC - 65 C + 150 C 460 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-Ch 500 Volt 53 Amp 5库存量
400预期 2027/4/9
最低: 1
倍数: 1

Si SMD/SMT ISOTOP-4 N-Channel 1 Channel 500 V 53 A 80 mOhms - 30 V, 30 V 2 V 434 nC - 65 C + 150 C 460 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET PowerMESH MOSFET 1,296库存量
5,000预期 2027/5/28
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.5 kV 4 A 5 Ohms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 160 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
27,370在途量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 1.5 kV 2.5 A 9 Ohms - 20 V, 20 V 3 V 29.3 nC - 55 C + 150 C 140 W Enhancement PowerMESH Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
1,760在途量
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.7 kV 2.6 A 7 Ohms - 30 V, 30 V 3 V 44 nC - 55 C + 150 C 63 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-channel 1500 V 4 A PowerMESH
900预期 2027/6/25
最低: 1
倍数: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.5 kV 4 A 7 Ohms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 63 W Enhancement PowerMESH Tube

STMicroelectronics MOSFET 1500V 6Ohm 2.5A N-Channel
1,790预期 2026/9/18
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 9 Ohms - 30 V, 30 V 3 V 29.3 nC - 55 C + 150 C 140 W Enhancement PowerMESH Tube

STMicroelectronics MOSFET N-CH 1500V HI-VOLT PWRMESH PWR MOSFET
1,200在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 8 A 2.5 Ohms - 30 V, 30 V 3 V 89.3 nC - 55 C + 150 C 320 W Enhancement PowerMESH Tube