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iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET

iDEAL Semi iS20M028S1PQ Automotive SuperQ® Power MOSFET is a 200V N-channel device developed for automotive and power switching applications. The MOSFET implements SuperQ technology in a TO-220 package and supports high-current switching with low on-resistance for efficient power control.

The iDEAL Semi iS20M028S1PQ delivers high short-circuit withstand capability and low switching losses for robust designs. The iS20M028S1PQ SuperQ Power MOSFET also supports motor control, battery disconnect switching, and switch-mode power supply applications where designers require reliable automotive-grade performance.

The MOSFET is an excellent option for high-efficiency motor drives, boost converters, SMPS control FETs, and secondary-side synchronous rectifier designs. The device combines low gate charge, strong avalanche energy rating, and a wide operating junction temperature range for demanding board-level power applications.

Features

  • AEC-Q101 automotive qualification
  • Automotive N-channel MOSFET with SuperQ technology
  • High short-circuit withstand capability for fault-tolerant switching designs
  • 100% UIS tested in production for avalanche robustness
  • Low switching losses for efficient power conversion
  • Wide safe operating area and current capability for motor drive and SMPS designs
  • Easier paralleling is supported by positive gate threshold behavior
  • TO-220 package for through-hole power design implementation

Applications

  • Motor control
  • Battery disconnect switch
  • Switch-mode power supply on the primary and secondary
  • Boost converters and SMPS control FETs
  • Secondary-side synchronous rectifier
  • High-efficiency motor drives

Specifications

  • N-channel MOSFET polarity
  • Drain-source voltage of 200V
  • Maximum RDS(on) of 25mΩ
  • Continuous drain current of 40A at TC = 25°C
  • Continuous drain current of 28A at TC = 100°C
  • Pulsed drain current of 154A
  • Total gate charge of 26.5nC
  • Switching charge of 2.7nC
  • Gate-source voltage of ±20V
  • Gate-source threshold voltage of 3.6V typical
  • Power dissipation of 100W
  • Operating junction and storage temperature range of -55°C to +175°C
  • Single-pulse avalanche energy of 159mJ
  • Junction-to-case thermal resistance of 1.5°C/W
  • TO-220 package

Solution

iDEAL Semiconductor SuperQ™ Technology

Redefines the fundamental structure of the power MOSFET at the atomic level, from 50% to 95%.

Learn More关于iDEAL Semiconductor SuperQ™ Technology

Typical Drain-Source On-Resistance

Performance Graph - iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET

Typical Circuit

Application Circuit Diagram - iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
发布日期: 2026-08-06 | 更新日期: 2026-08-12