IXYS IXSJ25N120R1K Power MOSFET
IXYS IXSJ25N120R1K Power MOSFET is a 1200V SiC power MOSFET designed for high-efficiency and high-frequency power conversion applications. This MOSFET features a low 62mΩ typical RDS(on) and supports up to 28A drain current, helping reduce conduction losses and heat generation. The IXSJ25N120R1K MOSFET offers fast switching performance with a low gate charge of 49nC, enabling lower switching losses and reduced gate-drive power requirements. This MOSFET comes in an ISO247-4L isolated ceramic package with improved thermal performance, 2500VAC isolation, and reduced EMI through low stray capacitance. The IXSJ25N120R1K MOSFET is well-suited for EV charging infrastructure, solar inverters, DC/DC converters, motor drives, UPS systems, and industrial power supplies.
Features
- Up to 1200V blocking voltage with low RDS(on) of 62mΩ
- 49nC low gate charge
- 1451pF low input capacitance
- Flexible gate voltage range (15V to 18V recommended turn-on) with a 0V recommended turn-off gate voltage
- 28A continuous drain current capability at 25°C
- Low conduction losses and reduced heat dissipation
- Low gate drive power requirements
- Supports high-speed switching with reduced gate drive losses
- ISO247-4L isolated ceramic package that improves thermal performance and power handling capability
- 2500VAC isolation voltage rating
- Reduced EMI due to low chip-to-heatsink stray capacitance
- Maximum junction temperature of 150°C
Applications
- EV charging infrastructure
- Solar inverters
- Switch-mode power supplies
- Uninterruptible power supply
- Motor drives
- DC/DC converters
- Battery chargers
- Induction heating
- High-frequency
Dimensions
