AS4C32M16D2C-25BIN

Alliance Memory
913-S4C32M16D2C25BIN
AS4C32M16D2C-25BIN

制造商:

说明:
动态随机存取存储器 DDR2, 512Mb, 32M x 16, 1.8V, 84-ball BGA, 400 MHz, Industrial Temp - Tray

ECAD模型:
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库存量: 270

库存:
270 可立即发货
生产周期:
6 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥32.9169 ¥32.92
¥30.5213 ¥305.21
¥29.6173 ¥740.43
¥28.9506 ¥1,447.53
¥28.2839 ¥2,828.39
¥28.1257 ¥5,878.27
¥26.6341 ¥11,133.05
¥26.3855 ¥27,572.85
¥25.312 ¥63,482.50

产品属性 属性值 选择属性
Alliance Memory
产品种类: 动态随机存取存储器
RoHS:  
SDRAM - DDR2
512 Mbit
16 bit
400 MHz
FBGA-84
32 M x 16
400 ps
1.7 V
1.9 V
- 40 C
+ 95 C
Tray
商标: Alliance Memory
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 209
子类别: Memory & Data Storage
电源电流—最大值: 75 mA
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已选择的属性: 0

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CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320299
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.