CE3521M4

CEL
551-CE3521M4
CE3521M4

制造商:

说明:
射频结栅场效应晶体管(RF JFET)晶体管 20GHz NF .70dB Ga 11.9dB -55C +125C

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库存量: 90

库存:
90 可立即发货
生产周期:
2 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥28.702 ¥28.70
¥18.6902 ¥186.90
¥11.4921 ¥1,149.21
¥10.6672 ¥5,333.60
¥9.8423 ¥9,842.30
¥9.5937 ¥23,984.25

产品属性 属性值 选择属性
CEL
产品种类: 射频结栅场效应晶体管(RF JFET)晶体管
RoHS:  
pHEMT
GaAs
20 GHz
11.9 dB
3 V
- 3 V
10 mA
- 55 C
+ 125 C
125 mW
SMD/SMT
minimold-4
Bulk
商标: CEL
配置: Single
正向跨导 - 最小值: 47 mS
闸/源截止电压: - 750 mV
NF—噪声系数: 0.7 dB
产品类型: RF JFET Transistors
工厂包装数量: 1
子类别: Transistors
单位重量: 4.528 mg
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已选择的属性: 0

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CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Low Noise FETs & ICs

CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.