GS816218DGD-250V

GSI Technology
464-GS816218DGD-250V
GS816218DGD-250V

制造商:

说明:
静态随机存取存储器 1.8/2.5V 1M x 18 18M

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供货情况

库存:
无库存
生产周期:
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥383.0587 ¥383.06
¥354.1081 ¥3,541.08
¥342.6047 ¥6,166.88
¥334.0054 ¥18,036.29
¥312.7501 ¥33,777.01
¥301.9925 ¥76,102.11
504 报价

产品属性 属性值 选择属性
GSI Technology
产品种类: 静态随机存取存储器
RoHS:  
18 Mbit
1 M x 18
5.5 ns
250 MHz
Parallel
2.7 V
1.7 V
205 mA, 225 mA
0 C
+ 70 C
SMD/SMT
BGA-165
Tray
商标: GSI Technology
组装国: Not Available
扩散国家: Not Available
原产国: Not Available
存储类型: SDR
湿度敏感性: Yes
产品类型: SRAM
系列: GS816218DGD
工厂包装数量: 18
子类别: Memory & Data Storage
商标名: SyncBurst
类型: Pipeline/Flow Through
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已选择的属性: 0

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CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
3A991.b.2.b

SyncBurst SRAMs

GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. GSI Technology SyncBurst SRAMs are used in military, networking, industrial, automotive, and medical imaging applications where a mid-range performance point is required.