GS8162Z36DB-200V

GSI Technology
464-GS8162Z36DB-200V
GS8162Z36DB-200V

制造商:

说明:
静态随机存取存储器 1.8/2.5V 512K x 36 18M

ECAD模型:
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供货情况

库存:
无库存
生产周期:
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥376.5273 ¥376.53
¥348.0739 ¥3,480.74
¥336.74 ¥7,071.54
¥321.6771 ¥13,510.44
¥313.2473 ¥32,890.97
¥304.648 ¥76,771.30
504 报价

产品属性 属性值 选择属性
GSI Technology
产品种类: 静态随机存取存储器
RoHS: N
18 Mbit
512 k x 36
6.5 ns
200 MHz
Parallel
2.7 V
1.7 V
205 mA, 210 mA
0 C
+ 70 C
SMD/SMT
BGA-119
Tray
商标: GSI Technology
组装国: Not Available
扩散国家: Not Available
原产国: Not Available
存储类型: SDR
湿度敏感性: Yes
产品类型: SRAM
系列: GS8162Z36DB
工厂包装数量: 21
子类别: Memory & Data Storage
商标名: NBT SRAM
类型: NBT Pipeline/Flow Through
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已选择的属性: 0

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CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
3A991.b.2.b

NBT SRAMs

GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that utilize all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.