IS43R16320D-6TLI

ISSI
870-IS43R16320D-6TLI
IS43R16320D-6TLI

制造商:

说明:
动态随机存取存储器 512M (32Mx16) 166MHz 2.5v DDR S动态随机存取存储器

ECAD模型:
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库存量: 280

库存:
280 可立即发货
生产周期:
8 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1   最多: 89
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥86.2755 ¥86.28
¥80.1509 ¥801.51
¥77.7553 ¥1,943.88
¥75.8456 ¥3,792.28

可能的更换

ISSI IS43R16320F-6TLI
ISSI
动态随机存取存储器 512M 32Mx16 166MHz DDR 2.5V

产品属性 属性值 选择属性
ISSI
产品种类: 动态随机存取存储器
RoHS:  
SDRAM - DDR
512 Mbit
16 bit
166 MHz
TSOP-II-66
32 M x 16
6 ns
2.3 V
2.7 V
- 40 C
+ 85 C
IS43R16320D
Tray
商标: ISSI
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 108
子类别: Memory & Data Storage
电源电流—最大值: 370 mA
单位重量: 2.188 g
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已选择的属性: 0

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CNHTS:
8542329000
USHTS:
8542320028
JPHTS:
8542320216
KRHTS:
8542321010
MXHTS:
8542320299
ECCN:
EAR99

DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.

IS43R32800D 8Mx32 256-Mbit DDR SDRAM

ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64MB to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages.