IS62WV6416ALL-55BLI

ISSI
870-62WV6416A55BLI
IS62WV6416ALL-55BLI

制造商:

说明:
静态随机存取存储器 1Mb, Low Power/Power Saver,Async,64K x 16,55ns,1.65v-2.2v,48 Ball mBGA (6x8 mm), RoHS

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产品属性 属性值 选择属性
ISSI
产品种类: 静态随机存取存储器
RoHS:  
1 Mbit
55 ns
2.2 V
1.7 V
5 mA
- 40 C
+ 85 C
SMD/SMT
BGA-48
Tray
商标: ISSI
数据速率: SDR
湿度敏感性: Yes
产品类型: SRAM
系列: IS62WV6416ALL
工厂包装数量: 480
子类别: Memory & Data Storage
类型: Asynchronous
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已选择的属性: 0

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合规代码
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
8542320194
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.b
原产地分类
原产国:
中国
组装原产国/地区:
不可用
扩散国家:
不可用
发货时,国家/地区可能会发生变化。

Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.

供货情况

库存:
无库存
生产周期:
12 周 预计工厂生产时间。
最少: 480   倍数: 480
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥24.3967 ¥11,710.42