IXFK120N30P3

IXYS
747-IXFK120N30P3
IXFK120N30P3

制造商：

说明：
MOSFET N-Channel: Power MOSFET w/Fast Diode

数据表:
ECAD模型:
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供货情况

库存：
无库存
生产周期：
39 周 预计工厂生产时间。
本产品所报告的交付时间长。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥156.4146 ¥156.41
¥99.8355 ¥998.36
¥99.3383 ¥9,933.83

产品属性 属性值 选择属性
IXYS
产品种类: MOSFET
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
300 V
120 A
27 mOhms
- 20 V, 20 V
3 V
150 nC
- 55 C
+ 150 C
1.13 mW
Enhancement
HiPerFET
Tube
商标: IXYS
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: PH
产品类型: MOSFETs
系列: IXFK120N30
工厂包装数量: 25
子类别: Transistors
晶体管类型: 1 N-Channel
单位重量: 10 g
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已选择的属性: 0

数据表

此功能要求启用JavaScript。

CNHTS:
8541210000
USHTS:
8541290065
TARIC:
8541500000
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

电动汽车直流快速充电器

Littelfuse电动汽车 (EV) 充电解决方案包括非车载直流快速充电器。Littelfuse电动汽车充电解决方案支持设计人员选择理想的解决方案，以确保其电动汽车充电装置功能齐全、安全可靠。

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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