IPD110N12N3GATMA1
图像仅供参考
请参阅产品规格
请参阅产品规格
726-IPD110N12N3GATM1
IPD110N12N3GATMA1
制造商:
说明:
MOSFET IFX FET >100-150V
MOSFET IFX FET >100-150V
数据表
Application Notes
- Application Note Introduction to Infineons Power MOSFET Simulation Models (PDF)
- Application Note Linear Mode Operation and SOA Power MOSFETs (PDF)
- Application Note Some key facts about avalanche (PDF)
- Buck converters negative spike at phase node (PDF)
- MOSFET detailed MOSFET behavioral analysis (邮政)
- MOSFET OptiMOS™ optimum selection for synchronous rectification (PDF)
- MOSFET OptiMOS™ selection for DC-DC converters (PDF)
- Package recommendations for assembly of Infineon TO-packages (PDF)
- Package Recommendations for board assembly of PG-T(S)DSON packages (PDF)
Models
- PCB Footprints & Symbols - OptiMOS™ Power MOSFETs 120V - Altium - v1.0 (邮政)
- PCB Footprints & Symbols - OptiMOS™ Power MOSFETs 120V - Cadence - v1.0 (邮政)
- PCB Footprints & Symbols - OptiMOS™ Power MOSFETs 120V - Eagle - v1.0 (邮政)
- PCB Footprints & Symbols - OptiMOS™ Power MOSFETs 120V - Mentor - v1.0 (邮政)
Other
Product Catalogs
SPICE Models
合规代码
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
原产地分类
- 原产国:
- 韩国
- 组装原产国/地区:
- 马来西亚
- 扩散国家:
- 韩国
中国
