IR2128SPBF
图像仅供参考
请参阅产品规格
请参阅产品规格
942-IR2128SPBF
IR2128SPBF
制造商：
说明：
栅极驱动器 1 HI SIDE DRVR INVERTING INPUT
栅极驱动器 1 HI SIDE DRVR INVERTING INPUT
数据表:
库存量: 3,368
-
库存：
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3,368 可立即发货出现意外错误。请稍候重试。
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生产周期：
-
24 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥20.9276 | ¥20.93 | |
| ¥15.6279 | ¥156.28 | |
| ¥12.8255 | ¥320.64 | |
| ¥12.2379 | ¥1,223.79 | |
| ¥11.9893 | ¥2,997.33 | |
| ¥11.5825 | ¥5,791.25 | |
| ¥11.2548 | ¥11,254.80 | |
| ¥10.2604 | ¥25,651.00 | |
| ¥10.17 | ¥38,646.00 |
备用包装
数据表
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS212(7,8,71) and IR212(7,8,71) Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
- Using the Current Sensing IR212x Gate Driver ICs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
