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S25FL128SAGNFI011

Name: Infineon S25FL128SAGNFI011
Brand: Infineon Technologies
SKU: 797-25FL128SAGNFI011
Price: 23.28 RMB
Availability: InStock

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Mouser编号：

797-25FL128SAGNFI011

制造商编号：

S25FL128SAGNFI011

制造商：

Infineon Technologies

说明：

NOR闪存 128Mb 3V 133MHz Serial NOR闪存

数据表:

S25FL128SAGNFI011 数据表 (PDF)

ECAD模型:

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库存量: 812

库存：: 812 可立即发货

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生产周期：: 12 周大于所示数量的预计工厂生产时间。

输入数量：

最少： 1 倍数： 1

单价:

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总价:

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预估关税:

定价 (含13% 增值税)

数量	单价	总价
	¥26.3064	¥26.31
	¥24.8148	¥248.15
	¥24.3176	¥607.94
	¥22.2497	¥1,112.49
	¥21.8316	¥2,183.16
	¥21.4248	¥5,356.20
	¥21.2553	¥10,627.65
	¥21.0971	¥43,249.06

备用包装

制造商零件编号:

S25FL128SAGNFI010

包装:

Tray

供货情况:

库存量

单价:

¥30.4422

最小:

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产品属性	属性值	选择属性
制造商:	Infineon
产品种类:	NOR闪存
RoHS:
安装风格:	SMD/SMT
封装 / 箱体:	WSON-8
系列:	S25FL128S
存储容量:	128 Mbit
电源电压-最小:	2.7 V
电源电压-最大:	3.6 V
有源读取电流（最大值）:	100 mA
接口类型:	SPI
最大时钟频率:	133 MHz
组织:	16 M x 8
数据总线宽度:	8 bit
定时类型:	Synchronous
最小工作温度:	- 40 C
最大工作温度:	+ 85 C
封装:	Tube
商标:	Infineon Technologies
湿度敏感性:	Yes
产品类型:	NOR Flash
速度:	133 MHz
工厂包装数量:	2050
子类别:	Memory & Data Storage
商标名:	MirrorBit
单位重量:	11 mg

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已选择的属性: 0

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数据表

S25FL128SAGNFI011 数据表 (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

CNHTS:: 8542319090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542326100
MXHTS:: 8471600499
ECCN:: 3A991.b.1.a

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.

FL Serial NOR Flash

Infineon Technologies FL Serial NOR Flash memory offers a reduced pin count for lower system cost while providing optimal read/write performance for various automotive, networking, consumer electronics, and industrial applications.

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V V_IO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL 串行 NOR 闪存

Cypress FL 串行 NOR 闪存减少了引脚数，从而降低系统成本降低，同时提供最佳读/写性能。这一特性使得 FL 串行 NOR 闪存特别适合用于汽车、网络、消费类电子产品以及工业应用。符合 AEC-Q100 认证，还可为汽车客户提供 PPAP 支持。 FL 系列有四个产品类别：FL-S、FL-L、FL1-K 和 FL-P。
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