MT41K512M8DA-093:P

Micron
340-265839-TRAY
MT41K512M8DA-093:P

制造商:

说明:
动态随机存取存储器 DDR3 4Gbit 8 78/117TFBGA 1 CT

寿命周期:
与工厂核实状态:
寿命周期信息不详。获取报价以从制造商那里核实此零件编号的供货情况。
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库存量: 2,191

库存:
2,191 可立即发货
生产周期:
53 周 大于所示数量的预计工厂生产时间。
数量大于2191的订购须受最低订购要求的限制。
本产品所报告的交付时间长。
最少: 1   倍数: 1   最多: 2191
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥135.0802 ¥135.08
¥129.5319 ¥1,295.32

产品属性 属性值 选择属性
Micron Technology
产品种类: 动态随机存取存储器
RoHS:  
SDRAM - DDR3L
4 Gbit
8 bit
1.066 GHz
FBGA-78
512 M x 8
13.09 ns
1.283 V
1.45 V
0 C
+ 95 C
MT41K
Tray
商标: Micron
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 1440
子类别: Memory & Data Storage
单位重量: 1.233 g
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已选择的属性: 0

                        
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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

MT41x DDR3 SDRAMs

Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs can operate concurrently due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.