2SC6026MFVGR,L3F
图像仅供参考
请参阅产品规格
请参阅产品规格
757-2SC6026MFVGRL3F
2SC6026MFVGR,L3F
制造商：
说明：
双极晶体管 - 双极结型晶体管(BJT) VESM PLN
双极晶体管 - 双极结型晶体管(BJT) VESM PLN
数据表
Application Notes
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
合规代码
- CNHTS:
- 8541210000
- CAHTS:
- 8541210000
- USHTS:
- 8541210095
- JPHTS:
- 8541210101
- KRHTS:
- 8541219000
- TARIC:
- 8541210000
- MXHTS:
- 85412101
- ECCN:
- EAR99
原产地分类
- 原产国:
- 泰国
- 组装原产国/地区:
- 泰国
- 扩散国家:
- 日本
库存量: 8,732
-
库存：
-
8,732可立即发货出现意外错误。请稍候重试。
-
在途量:
-
24,000预期 2026/9/4
-
生产周期：
-
9周 大于所示数量的预计工厂生产时间。
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2