Analog Devices Inc. SSM2212 双通道 NPN 匹配晶体管
亚德诺半导体 SSM2212 是一款双通道 NPN 匹配晶体管对，专门针对超低噪声音频系统而设计。SSM2212 具有极低的输入基极扩展电阻（rbb' 典型值为 28Ω）和大电流增益（hFE 典型值超过 600，IC = 1mA 时），可以实现出色的信噪比。高电流增益使其与采用市面上现有的单芯片放大器的系统相比，拥有卓越的性能。出色的电流增益匹配（ΔhFE约为 0.5%）且 VOS 低于 10μV（典型值），使其成为对称平衡设计的理想选择，可抑制高阶放大器谐波失真。基极发射极结点处的保护二极管可以保证匹配参数的稳定性。这些二极管能够防止基极-发射极结点反向偏置导致 β 和匹配特性下降。SSM2212 还是可靠的精密电流偏置和镜像电路的理想选择。此外，当晶体管对之间的 VBE 不匹配时，电流镜的精度会呈指数级下降，因此，在多数电路应用中，SSM2212 的低 VOS 无需进行失调调整。
Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. The stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction.
The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.
特性
- Very low voltage noise: 1nV/√Hz maximum at 100Hz
- Excellent current gain match: 0.5%
- Low offset voltage (VOS): 200μV maximum (SOIC)
- Outstanding offset voltage drift: 0.03μV/°C
- High gain-bandwidth product: 200MHz
Pin Connections
