|
|
双极晶体管 - 双极结型晶体管(BJT) 75V, 0.6A, NPN Bipolar Transistor
- MMBT2222A RF
- Taiwan Semiconductor
-
3,000:
¥0.30623
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-MMBT2222ARF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) 75V, 0.6A, NPN Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) -30V, -0.1A, PNP Bipolar Transistor
- BC858A RF
- Taiwan Semiconductor
-
3,000:
¥0.339
-
无库存
-
与工厂核实状态
|
Mouser 零件编号
821-BC858ARF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) -30V, -0.1A, PNP Bipolar Transistor
|
|
无库存
|
|
|
¥0.339
|
|
|
¥0.28137
|
|
|
¥0.2486
|
|
|
¥0.19888
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 Transistor,<30MHz,12.5V100W
- MRF421
- MACOM
-
1:
¥3,101.2737
-
114库存量
|
Mouser 零件编号
937-MRF421
|
MACOM
|
射频(RF)双极晶体管 Transistor,<30MHz,12.5V100W
|
|
114库存量
|
|
|
¥3,101.2737
|
|
|
¥2,643.1039
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
- MRF151A
- MACOM
-
1:
¥2,904.0774
-
260库存量
|
Mouser 零件编号
937-MRF151A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<175MHz,50V,150W,CuMollyPkg
|
|
260库存量
|
|
|
¥2,904.0774
|
|
|
¥2,428.2909
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460BG
- Microchip Technology
-
1:
¥463.2887
-
68库存量
|
Mouser 零件编号
494-ARF460BG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
68库存量
|
|
|
¥463.2887
|
|
|
¥447.5817
|
|
|
¥382.731
|
|
|
¥321.8466
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) -50V, -0.5A, PNP Bipolar Transistor
- BC807-25W RF
- Taiwan Semiconductor
-
3,000:
¥0.38081
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC807-25W-RF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) -50V, -0.5A, PNP Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp
- SD57045
- STMicroelectronics
-
1:
¥851.0595
-
51库存量
|
Mouser 零件编号
511-SD57045
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp
|
|
51库存量
|
|
|
¥851.0595
|
|
|
¥679.1865
|
|
|
¥654.0327
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS250/SOT1270/REELDP
- BLC2425M10LS250Y
- Ampleon
-
1:
¥1,006.2424
-
29库存量
-
100预期 2026/9/21
-
Mouser 的新产品
|
Mouser 零件编号
94-BLC2425M10LS250Y
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS250/SOT1270/REELDP
|
|
29库存量
100预期 2026/9/21
|
|
|
¥1,006.2424
|
|
|
¥842.6297
|
|
|
¥799.7801
|
|
|
¥772.9765
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频结栅场效应晶体管(RF JFET)晶体管 .45-6.0GHz NF .45dB Gain 15.5dB @ 2.4GHz
- SKY65050-372LF
- Skyworks Solutions, Inc.
-
1:
¥24.4871
-
27,519库存量
-
寿命结束
|
Mouser 零件编号
873-SKY65050-372LF
寿命结束
|
Skyworks Solutions, Inc.
|
射频结栅场效应晶体管(RF JFET)晶体管 .45-6.0GHz NF .45dB Gain 15.5dB @ 2.4GHz
|
|
27,519库存量
|
|
|
¥24.4871
|
|
|
¥16.7918
|
|
|
¥14.5544
|
|
|
¥13.899
|
|
|
¥13.8086
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 22dB 30MHz
- SD2943W
- STMicroelectronics
-
1:
¥1,331.3095
-
59库存量
|
Mouser 零件编号
511-SD2943W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 22dB 30MHz
|
|
59库存量
|
|
|
¥1,331.3095
|
|
|
¥1,054.8776
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频开发工具 1-1.1GHz 1500 Watt Eval Board
- QPD1025LEVB1
- Qorvo
-
1:
¥7,599.5325
-
3库存量
|
Mouser 零件编号
772-QPD1025LEVB1
|
Qorvo
|
射频开发工具 1-1.1GHz 1500 Watt Eval Board
|
|
3库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH7F71
- CML Micro
-
1:
¥728.172
-
3库存量
|
Mouser 零件编号
938-MWT-PH7F71
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
3库存量
|
|
|
¥728.172
|
|
|
¥728.172
|
|
|
¥657.208
|
|
最低: 1
倍数: 1
:
10
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥192.3147
-
151库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
151库存量
|
|
|
¥192.3147
|
|
|
¥138.877
|
|
|
¥129.1251
|
|
|
¥128.707
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl
- QPD1028
- Qorvo
-
1:
¥16,729.7404
-
11库存量
|
Mouser 零件编号
772-QPD1028
|
Qorvo
|
GaN 场效应晶体管 750W, 65V, Pre-matched, 1.2-1.4GHz, Earl
|
|
11库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 DC-2.7 GHz, 150W, 65V GaN RF Tr
- QPD1013
- Qorvo
-
1:
¥2,105.8115
-
33库存量
-
100预期 2026/11/11
|
Mouser 零件编号
772-QPD1013
|
Qorvo
|
GaN 场效应晶体管 DC-2.7 GHz, 150W, 65V GaN RF Tr
|
|
33库存量
100预期 2026/11/11
|
|
|
¥2,105.8115
|
|
|
¥2,084.7031
|
|
|
¥1,612.058
|
|
|
¥1,612.058
|
|
最低: 1
倍数: 1
:
50
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
- MRF148A
- MACOM
-
1:
¥1,467.9604
-
1,009库存量
|
Mouser 零件编号
937-MRF148A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
|
|
1,009库存量
|
|
|
¥1,467.9604
|
|
|
¥1,171.0077
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,150W,<200MHz,28V,TMOS
- MRF174
- MACOM
-
1:
¥1,265.4757
-
70库存量
|
Mouser 零件编号
937-MRF174
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,150W,<200MHz,28V,TMOS
|
|
70库存量
|
|
|
¥1,265.4757
|
|
|
¥1,019.8024
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-11W
- STMicroelectronics
-
1:
¥723.0983
-
201库存量
|
Mouser 零件编号
511-SD2931-11W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
201库存量
|
|
|
¥723.0983
|
|
|
¥587.4531
|
|
|
¥539.4733
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥210.2591
-
228库存量
|
Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
228库存量
|
|
|
¥210.2591
|
|
|
¥168.3248
|
|
|
¥145.5779
|
|
|
¥135.2384
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 Transistor, 150W, 30MHz,28V,Matched_pair
MACOM MRF422MP
- MRF422MP
- MACOM
-
1:
¥5,041.5402
-
9库存量
-
14在途量
|
Mouser 零件编号
937-MRF422MP
|
MACOM
|
射频(RF)双极晶体管 Transistor, 150W, 30MHz,28V,Matched_pair
|
|
9库存量
14在途量
|
|
|
¥5,041.5402
|
|
|
¥4,359.879
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003S-E
- STMicroelectronics
-
1:
¥91.982
-
466库存量
|
Mouser 零件编号
511-PD55003S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
466库存量
|
|
|
¥91.982
|
|
|
¥63.6868
|
|
|
¥60.1386
|
|
|
¥58.647
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 Transistor,Bipolar,55W,28V,1.20-1.40GHz
MACOM PH1214-55EL
- PH1214-55EL
- MACOM
-
1:
¥5,269.755
-
5库存量
|
Mouser 零件编号
937-PH1214-55EL
|
MACOM
|
射频(RF)双极晶体管 Transistor,Bipolar,55W,28V,1.20-1.40GHz
|
|
5库存量
|
|
|
¥5,269.755
|
|
|
¥4,557.2335
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH8F
- CML Micro
-
10:
¥789.5649
-
100库存量
|
Mouser 零件编号
938-MWT-PH8F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
100库存量
|
|
|
¥789.5649
|
|
|
¥789.0451
|
|
|
¥729.9009
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
- BFR 360L3 E6765
- Infineon Technologies
-
1:
¥2.5651
-
29,490库存量
-
寿命结束
|
Mouser 零件编号
726-BFR360L3E6765
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
|
|
29,490库存量
|
|
|
¥2.5651
|
|
|
¥1.582
|
|
|
¥1.2543
|
|
|
¥1.1865
|
|
|
查看
|
|
|
¥1.03395
|
|
|
¥1.1413
|
|
|
¥1.10062
|
|
|
¥1.03395
|
|
|
¥1.03395
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) -30V, -0.1A, PNP Bipolar Transistor
- BC858B RF
- Taiwan Semiconductor
-
3,000:
¥0.26442
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC858BRF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) -30V, -0.1A, PNP Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|