|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-11W
- STMicroelectronics
-
1:
¥723.0983
-
201库存量
|
Mouser 零件编号
511-SD2931-11W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
201库存量
|
|
|
¥723.0983
|
|
|
¥587.4531
|
|
|
¥539.4733
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥192.3147
-
151库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
151库存量
|
|
|
¥192.3147
|
|
|
¥138.877
|
|
|
¥130.5263
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频开发工具 1-1.1GHz 1500 Watt Eval Board
- QPD1025LEVB1
- Qorvo
-
1:
¥7,599.5325
-
3库存量
|
Mouser 零件编号
772-QPD1025LEVB1
|
Qorvo
|
射频开发工具 1-1.1GHz 1500 Watt Eval Board
|
|
3库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 Transistor,GaN,100W,CW
- MAGX-100027-100C0P
- MACOM
-
1:
¥1,116.4965
-
70库存量
|
Mouser 零件编号
937-MAGX100027100C0P
|
MACOM
|
射频放大器 Transistor,GaN,100W,CW
|
|
70库存量
|
|
|
¥1,116.4965
|
|
|
¥933.7755
|
|
|
¥862.1448
|
|
|
¥861.9866
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) 50V, 0.5A, NPN Bipolar Transistor
- BC817-16W RF
- Taiwan Semiconductor
-
3,000:
¥0.38081
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC817-16W-RF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) 50V, 0.5A, NPN Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) 80V, 0.1A, NPN Bipolar Transistor
- BC846AW RF
- Taiwan Semiconductor
-
18,000:
¥0.29832
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC846AW-RF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) 80V, 0.1A, NPN Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 18,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 Transistor,Bipolar,55W,28V,1.20-1.40GHz
MACOM PH1214-55EL
- PH1214-55EL
- MACOM
-
1:
¥5,269.755
-
5库存量
|
Mouser 零件编号
937-PH1214-55EL
|
MACOM
|
射频(RF)双极晶体管 Transistor,Bipolar,55W,28V,1.20-1.40GHz
|
|
5库存量
|
|
|
¥5,269.755
|
|
|
¥4,557.2335
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,150W,<200MHz,28V,TMOS
- MRF174
- MACOM
-
1:
¥1,265.4757
-
70库存量
|
Mouser 零件编号
937-MRF174
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,150W,<200MHz,28V,TMOS
|
|
70库存量
|
|
|
¥1,265.4757
|
|
|
¥1,019.8024
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH8F
- CML Micro
-
10:
¥789.5649
-
100库存量
|
Mouser 零件编号
938-MWT-PH8F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
100库存量
|
|
|
¥789.5649
|
|
|
¥789.0451
|
|
|
¥729.9009
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) -50V, -0.1A, PNP Bipolar Transistor
- BC857A RF
- Taiwan Semiconductor
-
3,000:
¥0.25651
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC857ARF
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) -50V, -0.1A, PNP Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-80MHz 600Watts 50Volt Gain 21dB
- MRF157
- MACOM
-
1:
¥9,751.3915
-
8库存量
|
Mouser 零件编号
937-MRF157
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-80MHz 600Watts 50Volt Gain 21dB
|
|
8库存量
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 2X PNP MATCHED INDEL
- HFA3135IHZ96
- Renesas / Intersil
-
1:
¥112.3333
-
457库存量
-
3,000预期 2026/10/19
|
Mouser 零件编号
968-HFA3135IHZ96
|
Renesas / Intersil
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 2X PNP MATCHED INDEL
|
|
457库存量
3,000预期 2026/10/19
|
|
|
¥112.3333
|
|
|
¥81.8007
|
|
|
¥69.3933
|
|
|
¥62.2065
|
|
|
¥58.3984
|
|
|
¥58.3984
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BFP 620F H7764
- Infineon Technologies
-
1:
¥4.8025
-
11,055库存量
-
寿命结束
|
Mouser 零件编号
726-BFP620FH7764
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
11,055库存量
|
|
|
¥4.8025
|
|
|
¥3.0171
|
|
|
¥2.4408
|
|
|
¥2.3278
|
|
|
¥2.2374
|
|
|
¥2.0792
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 DC-6GHz 28V P3dB 10W @3.3GHz
- T2G6000528-Q3
- Qorvo
-
1:
¥909.5144
-
374库存量
|
Mouser 零件编号
772-T2G6000528-Q3
|
Qorvo
|
GaN 场效应晶体管 DC-6GHz 28V P3dB 10W @3.3GHz
|
|
374库存量
|
|
|
¥909.5144
|
|
|
¥824.5723
|
|
|
¥654.5186
|
|
|
¥592.5042
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
- BFR 740L3RH E6327
- Infineon Technologies
-
1:
¥15.142
-
14,611库存量
-
寿命结束
|
Mouser 零件编号
726-BFR740L3RHE6327
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
|
|
14,611库存量
|
|
|
¥15.142
|
|
|
¥9.3451
|
|
|
¥6.1585
|
|
|
¥4.8364
|
|
|
查看
|
|
|
¥3.1301
|
|
|
¥4.1358
|
|
|
¥3.7516
|
|
|
¥3.3222
|
|
|
¥3.2205
|
|
|
¥3.1301
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
¥183.4668
-
573库存量
|
Mouser 零件编号
511-PD55015TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
573库存量
|
|
|
¥183.4668
|
|
|
¥137.7244
|
|
|
¥130.9444
|
|
|
¥122.2547
|
|
最低: 1
倍数: 1
:
600
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003S-E
- STMicroelectronics
-
1:
¥91.982
-
466库存量
|
Mouser 零件编号
511-PD55003S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
466库存量
|
|
|
¥91.982
|
|
|
¥63.6868
|
|
|
¥60.1386
|
|
|
¥58.647
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频(RF)双极晶体管 Transistor,25W,3.1-3.5GHz,2uS,10%
- PH3135-25S
- MACOM
-
1:
¥3,798.3142
-
18库存量
|
Mouser 零件编号
937-PH3135-25S
|
MACOM
|
射频(RF)双极晶体管 Transistor,25W,3.1-3.5GHz,2uS,10%
|
|
18库存量
|
|
|
¥3,798.3142
|
|
|
¥3,237.2579
|
|
|
¥3,103.0026
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 10 MHz - 4 GHz
- TAV1-331NM+
- Mini-Circuits
-
1:
¥177.5117
-
408库存量
|
Mouser 零件编号
139-TAV1-331NM+
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 SMT Low Noise Amplifier, 10 MHz - 4 GHz
|
|
408库存量
|
|
|
¥177.5117
|
|
|
¥23.0746
|
|
|
¥21.5943
|
|
|
¥20.679
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
- BFR 360L3 E6765
- Infineon Technologies
-
1:
¥2.5651
-
29,490库存量
-
寿命结束
|
Mouser 零件编号
726-BFR360L3E6765
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
|
|
29,490库存量
|
|
|
¥2.5651
|
|
|
¥1.582
|
|
|
¥1.2543
|
|
|
¥1.1865
|
|
|
查看
|
|
|
¥1.03395
|
|
|
¥1.1413
|
|
|
¥1.10062
|
|
|
¥1.03395
|
|
|
¥1.03395
|
|
最低: 1
倍数: 1
:
15,000
|
|
|
|
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 2X NPN MATCHED INDE
- HFA3134IHZ96
- Renesas / Intersil
-
1:
¥73.2014
-
1,700库存量
|
Mouser 零件编号
968-HFA3134IHZ96
|
Renesas / Intersil
|
射频(RF)双极晶体管 W/ANNEAL TXARRAY 2X NPN MATCHED INDE
|
|
1,700库存量
|
|
|
¥73.2014
|
|
|
¥50.624
|
|
|
¥43.5954
|
|
|
¥42.5106
|
|
|
查看
|
|
|
¥39.7873
|
|
|
¥39.9568
|
|
|
¥39.7873
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) 50V, 0.1A, NPN Bipolar Transistor
- BC847C RF
- Taiwan Semiconductor
-
3,000:
¥0.2486
-
无库存交货期 52 周
-
与工厂核实状态
|
Mouser 零件编号
821-BC847C
与工厂核实状态
|
Taiwan Semiconductor
|
双极晶体管 - 双极结型晶体管(BJT) 50V, 0.1A, NPN Bipolar Transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 Radio-frequency Bipolar Transistor
- 2SC5108-Y,LF
- Toshiba
-
1:
¥7.1981
-
2,764库存量
|
Mouser 零件编号
757-2SC5108-YLF
|
Toshiba
|
射频(RF)双极晶体管 Radio-frequency Bipolar Transistor
|
|
2,764库存量
|
|
|
¥7.1981
|
|
|
¥4.9607
|
|
|
¥3.1414
|
|
|
¥1.9436
|
|
|
¥1.2769
|
|
|
查看
|
|
|
¥1.5029
|
|
|
¥1.10853
|
|
|
¥0.96728
|
|
|
¥0.78535
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
- BFP843H6327XTSA1
- Infineon Technologies
-
1:
¥8.5993
-
8,307库存量
-
寿命结束
|
Mouser 零件编号
726-BFP843H6327XTSA1
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
|
|
8,307库存量
|
|
|
¥8.5993
|
|
|
¥4.9607
|
|
|
¥3.4804
|
|
|
¥2.6781
|
|
|
¥1.9775
|
|
|
查看
|
|
|
¥2.4182
|
|
|
¥1.8419
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
- BFR840L3RHESDE6327XTSA1
- Infineon Technologies
-
1:
¥8.023
-
28,775库存量
-
寿命结束
|
Mouser 零件编号
726-BFR840L3RHESDE63
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTORS
|
|
28,775库存量
|
|
|
¥8.023
|
|
|
¥5.1415
|
|
|
¥4.2149
|
|
|
¥4.0228
|
|
|
查看
|
|
|
¥3.1075
|
|
|
¥3.8081
|
|
|
¥3.6273
|
|
|
¥3.3222
|
|
|
¥3.1301
|
|
|
¥3.1075
|
|
最低: 1
倍数: 1
:
15,000
|
|
|