FDMS86300DC

onsemi
512-FDMS86300DC
FDMS86300DC

制造商:

说明:
MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET

ECAD模型:
下载免费库加载程序,将此文件转换,以供您的ECAD工具使用。了解详情。

库存量: 39,872

库存:
39,872 可立即发货
生产周期:
16 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按3000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥31.5948 ¥31.59
¥20.5999 ¥206.00
¥16.1251 ¥1,612.51
¥13.4809 ¥6,740.45
¥11.5825 ¥11,582.50
整卷卷轴(请按3000的倍数订购)
¥11.0062 ¥33,018.60
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
onsemi
产品种类: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DualCool-56-8
N-Channel
1 Channel
80 V
24 A
4 mOhms
- 20 V, 20 V
3.4 V
72 nC
- 55 C
+ 150 C
125 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
商标: onsemi
配置: Dual
正向跨导 - 最小值: 60 s
产品类型: MOSFETs
系列: FDMS86300DC
工厂包装数量: 3000
子类别: Transistors
晶体管类型: N-Channel
典型接通延迟时间: 31 ns
单位重量: 90 mg
找到的产品:
要显示类似产品,至少选中一个复选框
要显示该类别下的类似产品,请至少选中上方的一个复选框。
已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Dual Cool™ MOSFETs

onsemi Dual Cool™ PowerTrench® MOSFETs provide Dual Cool packaging technology that features bottom- and top-side cooling in a PQFN package. The PQFN footprint is an industry standard and provides performance flexibility for the designer. The Dual Cool MOSFETs feature enhanced dual path thermal performance and improved parasitics over wire-bonded predecessors. The use of a heat sink with Dual Cool packaging technology provides even more impressive results. When a heat sink is used with onsemi Dual Cool package technology, synchronous buck converters deliver higher output current and increased power density.

PowerTrench® MOSFET

仙童 提供业界最齐全的 PowerTrench® MOSFET 产品组合。您可以从多种技术中选择适合您应用的 MOSFET。仙童 提供 N 沟道和 P 沟道版本的 MOSFET,利用其先进的 Power Trench® 工艺,该工艺经优化实现了低 RDS(ON) 开关性能和坚固性。这些 PowerTrench® MOSFET 可满足几乎任何应用的需要,如负载开关、一次开关、移动计算、直流-直流转换器、同步整流器等等。
了解更多

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and RDS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low RDS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More


ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low RDS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering