GE06MPS06E-TR

GeneSiC Semiconductor
905-GE06MPS06E-TR
GE06MPS06E-TR

制造商:

说明:
碳化硅肖特基二极管 650V 6A TO-252-2 SiC Schottky MPS

寿命周期:
新产品:
此制造商的新产品。
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库存量: 2,364

库存:
2,364 可立即发货
生产周期:
16 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥17.7184 ¥17.72
¥15.4584 ¥154.58
¥14.5883 ¥364.71
¥13.3792 ¥1,337.92
¥12.6786 ¥3,169.65
¥12.1588 ¥6,079.40
¥11.639 ¥11,639.00
整卷卷轴(请按2500的倍数订购)
¥11.0288 ¥27,572.00
¥10.5994 ¥52,997.00

产品属性 属性值 选择属性
Navitas Semiconductor
产品种类: 碳化硅肖特基二极管
RoHS:  
SMD/SMT
TO-252-2
Single
17 A
650 V
1.25 V
33 A
1 uA
- 55 C
+ 175 C
SiC Schottky MPS
Reel
Cut Tape
商标: GeneSiC Semiconductor
Pd-功率耗散: 133 W
产品类型: SiC Schottky Diodes
工厂包装数量: 2500
子类别: Diodes & Rectifiers
Vr - 反向电压 : 650 V
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已选择的属性: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. 

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. These diodes operate at 175°C maximum operating temperature and show temperature-independent switching behavior. The 650V SiC Schottky diodes feature superior Avalanche (UIS) capability and low device capacitance. One key advantage of these diodes is the ease of paralleling devices without thermal runaway. Typical applications include SMPS, EVs, motor drives, LED and HID lighting, medical imaging systems, high voltage sensing, induction heating and welding, and pulsed power.