MR4A08BCYS35

Everspin Technologies
936-MR4A08BCYS35
MR4A08BCYS35

制造商:

说明:
磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 2Mx8 Parallel 磁阻随机存取存储器 (MRAM)

ECAD模型:
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库存量: 280

库存:
280 可立即发货
生产周期:
27 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥496.296 ¥496.30
¥458.328 ¥4,583.28
¥443.4459 ¥11,086.15
¥432.3606 ¥21,618.03
¥416.8909 ¥41,689.09
270 报价

产品属性 属性值 选择属性
Everspin Technologies
产品种类: 磁阻随机存取存储器 (MRAM)
RoHS:  
TSOP-II-44
Parallel
16 Mbit
2 M x 8
8 bit
35 ns
3 V
3.6 V
60 mA, 152 mA
- 40 C
+ 85 C
MR4A08B
Tray
商标: Everspin Technologies
湿度敏感性: Yes
安装风格: SMD/SMT
Pd-功率耗散: 600 mW
产品类型: MRAM
工厂包装数量: 135
子类别: Memory & Data Storage
商标名: Parallel I/O (x8)
单位重量: 2.200 g
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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.