SSM3K324R,LF

Toshiba
757-SSM3K324RLF
SSM3K324R,LF

制造商:

说明:
MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF

ECAD模型:
下载免费库加载程序,将此文件转换,以供您的ECAD工具使用。了解详情。

库存量: 25,968

库存:
25,968 可立即发货
生产周期:
26 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按3000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥3.1414 ¥3.14
¥1.9323 ¥19.32
¥1.2204 ¥122.04
¥0.90965 ¥454.83
¥0.81021 ¥810.21
整卷卷轴(请按3000的倍数订购)
¥0.67009 ¥2,010.27
¥0.60342 ¥3,620.52
¥0.51302 ¥4,617.18
¥0.44635 ¥10,712.40
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
Toshiba
产品种类: MOSFET
RoHS:  
Si
N-Channel
1 Channel
U-MOSVII-H
Reel
Cut Tape
MouseReel
商标: Toshiba
配置: Single
产品类型: MOSFETs
系列: SSM3K324
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 1 N-Channel
单位重量: 11 mg
找到的产品:
要显示类似产品,至少选中一个复选框
要显示该类别下的类似产品,请至少选中上方的一个复选框。
已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

分立式固态硬盘 (SSD) 解决方案

Toshiba 分立式固态硬盘 (SSD) 解决方案包括各种产品系列,采用瞬态电压抑制器 (TVS)、肖特基势垒二极管 (SBD)、低压差 (LDO) 稳压器、负载开关IC和新型功能强大的电子保险丝IC,可满足最新要求。这些SSD 可以比传统硬盘驱动器 (HDD) 更快地解析数据。随着SSD技术的改进,它将需要能够满足日益严格的电源需求的电源电路,以及保护功能,确保重要数据安全,无故障。 Toshiba提供各种负载开关和MOSFET,用于控制电源输入、保护IC和设计用于在热插拔期间处理异常输入电源情况和过压浪涌的二极管。

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.