SSM3K345R,LF

Toshiba
757-SSM3K345RLF
SSM3K345R,LF

制造商：

说明：
MOSFET LowON Res MOSFET ID=4A VDSS=20V

数据表:
ECAD模型:
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库存量: 49,519

库存：
49,519 可立即发货
生产周期：
18 周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴（请按3000的倍数订购）

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™ †
¥3.5595 ¥3.56
¥1.6611 ¥16.61
¥1.3447 ¥134.47
¥1.04186 ¥520.93
¥0.9266 ¥926.60
整卷卷轴（请按3000的倍数订购）
¥0.64523 ¥1,935.69
¥0.63732 ¥3,823.92
¥0.62037 ¥5,583.33
¥0.59551 ¥14,292.24
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩

产品属性 属性值 选择属性
Toshiba
产品种类: MOSFET
RoHS:  
Si
SMD/SMT
SOT-23F-3
N-Channel
1 Channel
20 V
4 A
25 mOhms
- 8 V, 8 V
400 mV
3.6 nC
- 55 C
+ 150 C
2 W
Enhancement
U-MOSVI
Reel
Cut Tape
MouseReel
商标: Toshiba
配置: Single
产品类型: MOSFETs
系列: SSM3K345R
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 45 ns
典型接通延迟时间: 25 ns
单位重量: 11 mg
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已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

SSM3 High Current MOSFETs

Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches. 

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

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