SSM6N67NU,LF

Toshiba
757-SSM6N67NULF
SSM6N67NU,LF

制造商：

说明：
MOSFET LowON Res MOSFET ID=4A VDSS=30V

数据表:
ECAD模型:
下载免费库加载程序，将此文件转换，以供您的ECAD工具使用。了解详情。
更多信息
了解Toshiba SSM6N67NU,LF详情

库存量: 20,211

库存：
20,211
可立即发货
在途量:
45,000
预期 2026/3/6
72,000
预期 2026/5/4
生产周期：
16
周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴（请按3000的倍数订购）

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™ †
¥5.0511 ¥5.05
¥3.1301 ¥31.30
¥2.0114 ¥201.14
¥1.5255 ¥762.75
¥1.3447 ¥1,344.70
整卷卷轴（请按3000的倍数订购）
¥1.10062 ¥3,301.86
¥1.017 ¥6,102.00
¥0.87688 ¥7,891.92
¥0.84411 ¥20,258.64
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。 ↩

产品属性 属性值 选择属性
Toshiba
产品种类: MOSFET
RoHS:  
Si
SMD/SMT
UDFN-6
N-Channel
2 Channel
30 V
4 A
39.1 mOhms
- 8 V, 12 V
400 mV
3.2 nC
- 55 C
+ 150 C
1 W
Enhancement
AEC-Q101
U-MOSVII-H
Reel
Cut Tape
MouseReel
商标: Toshiba
配置: Dual
正向跨导 - 最小值: 6 S
产品类型: MOSFETs
系列: SSM6N67NU
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 17 ns
典型接通延迟时间: 26 ns
单位重量: 8.500 mg
找到的产品:
要显示类似产品，至少选中一个复选框
要显示该类别下的类似产品，请至少选中上方的一个复选框。
已选择的属性: 0 

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

出现意外错误。


有问题吗？ 请访问帮助中心。
有关特定订单的问题，请登录您的账户。

如果您遇到其他问题，请致电800-346-6873联系我们，或发送电子邮件至 help@mouser.com 。