STP18NM80

STMicroelectronics
511-STP18NM80
STP18NM80

制造商:

说明:
MOSFET N-channel 800 V MDMesh

ECAD模型:
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库存量: 921

库存:
921 可立即发货
生产周期:
14 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥57.1554 ¥57.16
¥31.0976 ¥310.98
¥29.0297 ¥2,902.97
¥28.9506 ¥28,950.60

产品属性 属性值 选择属性
STMicroelectronics
产品种类: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
17 A
295 mOhms
- 30 V, 30 V
3 V
70 nC
- 65 C
+ 150 C
190 W
Enhancement
MDmesh
Tube
商标: STMicroelectronics
配置: Single
下降时间: 50 ns
产品类型: MOSFETs
上升时间: 28 ns
系列: STP18NM80
工厂包装数量: 1000
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 96 ns
典型接通延迟时间: 18 ns
单位重量: 2 g
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已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
85423999
ECCN:
EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.